New nitridation technique for mosaicity control in RF‐MBE InN growth

Abstract

Mosaicity control is necessary for improvement of crystal quality of III‐V nitride semiconductor materials, especially for InN. However, the mosaicity control for both of the tilt and the twist angle fluctuations has not been achieved still now in the direct growth of InN on the sapphire substrate by nitridation. Moreover, the role of nitridation process has not been so much clear from the view point of the mosaicity control. In this paper, we propose a new nitridation technique, two‐step nitridation, combined with the high‐ and the low‐ temperature nitridation to reduce the mosaicity and also to make clear the roles of the nitridation process in the InN growth. As the result of the new nitridation technique, the considerably improvement of the tilt and the twist angle fluctuations has been successfully achieved in the direct growth of InN without any buffer layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)