New non-destructive Read/Write circuit for Memristor-based memories

Elshamy, Mohamed; Mostafa, Hassan; Said, M. Sameh

doi:10.1109/icengtechnol.2014.7016788

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…Since the reading of the FeCAP is destructive, the stored data needs to be rewritten after the read operation [ 32 , 33 ]. For the traditional SA mode, the output of the SA will be fed back to the memory cell.…”

Section: Proposed 1t2c Fecap-based X(n)or Logic Operationmentioning

confidence: 99%

A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

et al. 2021

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Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

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Section: Proposed 1t2c Fecap-based X(n)or Logic Operationmentioning

confidence: 99%