New paramagnetic defects in synthetic diamonds grown using nickel catalyst

Neves, A.J.; Pereira, Rui N.; Соболев, Н. А.; Nazaré, Maria Helena; Gehlhoff, W.; Näser, A.; Kanda, H.

doi:10.1016/s0921-4526(99)00596-7

Cited by 13 publications

(14 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that the V in this descriptor can also be found described in the literature as a split-vacancy, double semivacancy, semivacancy pair, or confusingly termed a divacancy. The NiV defect is labeled NE4/AB1 in EPR when in the negative charge state − and NE4* when neutral, the Ni has the electronic configuration 3d 5 and is S = 1/2 . The symmetry was determined to be D 3 d , with the Ni atom surrounded by six carbons arranged in a distorted octahedral arrangement with Ni–C bond lengths ∼1.8 Å. , At temperatures where Ni s converts to NiV with emission of a carbon interstitial, the interstitial is highly mobile.…”

Section: Properties Of Nitrogen-doped Diamondmentioning

confidence: 99%

Nitrogen in Diamond

et al. 2020

View full text Add to dashboard Cite

Nitrogen is ubiquitous in both natural and laboratory-grown diamond, but the number and nature of the nitrogen-containing defects can have a profound effect on the diamond material and its properties. An ever-growing fraction of the supply of diamond appearing on the world market is now lab-grown. Here, we survey recent progress in two complementary diamond synthesis methodshigh pressure high temperature (HPHT) growth and chemical vapour deposition (CVD), how each is allowing ever more precise control of nitrogen incorporation in the resulting diamond, and how the diamond produced by either method can be further processed (e.g. by implantation and/or annealing) to achieve a particular outcome or property. The burgeoning availability of diamond samples grown under well-defined conditions has also enabled huge advances in the characterization and understanding of nitrogen-containing defects in diamondalone, and in association with vacancies, hydrogen and transition metal atoms. Amongst these, the negatively charged nitrogen-vacancy (NV −) defect in diamond is attracting particular current interest on account of the many new and exciting opportunities it offers for, e.g., quantum technologies, nanoscale magnetometry and biosensing. 2 Laboratory Based Synthesis of Diamond and Nitrogen-Containing Diamond 2.1 High Pressure High Temperature (HPHT) Methods. Nature was the inspiration for the HPHT method, by which diamond growth was demonstrated by Swedish company ASEA in 1953 (though not reported at that time) and subsequently by US company General Electric in 1955. 14 , 15 Most present-day HPHT synthesis exploits the temperature-gradient growth (TGG) method developed later in that decade. 16 However, it took many further years before the design and control of HPHT reactors yielded diamonds of

show abstract

Section: Properties Of Nitrogen-doped Diamondmentioning

confidence: 99%

Nitrogen in Diamond

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Another scientific group synthesized diamonds in Fe-Ni-C and Ni-C systems [26][27][28][29]. The diamonds crystals have large cubic faces.…”

Section: Specific Features Of the Formation Of Nitrogen-nickel Defectsmentioning

confidence: 99%

“…Table 2. Spin-Hamiltonian parameters of the nitrogen-free nickel defects in diamond [26][27][28][29].…”

Section: Specific Features Of the Formation Of Nitrogen-nickel Defectsmentioning

confidence: 99%

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

View full text Add to dashboard Cite

Diamond is a unique mineral widely used in diverse fields due to its remarkable properties. The development of synthesis technology made it possible to create diamond-based semiconductor devices. In addition, doped diamond can be used as single photon emitters in various luminescence applications. Different properties are the result of the presence of impurities or intrinsic defects in diamond. Thus, the investigation of the defect formation process is of particular interest. Although hydrogen, nitrogen, and boron have been known to form different point defects, the possibility for large impurity atoms to incorporate into the diamond crystal structure has been questioned for a long time. In the current paper, the paramagnetic nickel split-vacancy defect in diamond is described, and the further investigation of nickel-, cobalt-, titanium-, phosphorus-, silicon-, and germanium-related defects is discussed.

show abstract

“…EPR of diamond grown from a solvent of Ni enriched with 61 Ni (I = 3 2 , natural abundance 1.2%) has proven the existence of negatively charged substitutional Ni − s with spin S = 3 2 (W8), giving rise to an isotropic line at g = 2.0319 [4,5]. Furthermore, strong evidence for the formation of Ni-related defects in diamonds grown from Ni-containing solvents has been found in EPR studies [6][7][8][9][10][11][12][13]. Among these centres, the AB1-AB6 [6][7][8] and NE1-NE8 [12] defects appear in N-rich crystals, whereas the NIRIM1 and NIRIM2 are typically observed in samples with low N concentration [8,13].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, strong evidence for the formation of Ni-related defects in diamonds grown from Ni-containing solvents has been found in EPR studies [6][7][8][9][10][11][12][13]. Among these centres, the AB1-AB6 [6][7][8] and NE1-NE8 [12] defects appear in N-rich crystals, whereas the NIRIM1 and NIRIM2 are typically observed in samples with low N concentration [8,13]. Such crystals are usually grown from a Ni solvent with nitrogen getters (e.g., Ti).…”

Section: Introductionmentioning

confidence: 99%

Photoexcitation electron paramagnetic resonance studies on nickel-related defects in diamond

Pereira¹,

Gehlhoff²,

Neves³

et al. 2003

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

Measurements of the electron paramagnetic resonance (EPR) upon photoexcitation are reported on Ni defects in diamonds grown with Nicontaining solvent/catalysts. The temperature dependence of the W8 EPR spectrum photoquenching shows that the relaxation of substitutional Ni − s upon electron ionization is very small, corroborating the interpretation that the previously reported photoinduced effects with thresholds at 2.5 and 3.0 eV correspond to two complementary photoionization transitions involving Ni s . Photoinduced behaviour of the NIRIM1 EPR centre favours the interstitial Ni + i model for this defect and suggests that the Ni 0/+ i level is located at 1.98±0.03 eV below the conduction band. In N-doped diamond, Ni i is more likely to appear in the neutral state, undetectable by EPR, whereas at substitutional sites Ni − s is revealed. Observation of a strong AB2 EPR signal photoquenching and simultaneous detection of different spectral dependencies of the EPR intensity for other defects determine an electron photoionization energy of 1.67±0.03 eV for the AB2. The implications of the obtained data for the identification of the AB defects' structure are discussed. Our study shows that Ni defects exhibit a weak electron-lattice interaction. The importance of the stronger spin-orbit coupling in these centres as compared to other defects in diamond is discussed. Assuming direct intercentre charge transfer from N s , a theoretical description of the photoionization kinetics is proposed to explain the observed photoresponse of Ni defects.

show abstract

New paramagnetic defects in synthetic diamonds grown using nickel catalyst

Cited by 13 publications

References 13 publications

Nitrogen in Diamond

Nitrogen in Diamond

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Photoexcitation electron paramagnetic resonance studies on nickel-related defects in diamond

Contact Info

Product

Resources

About