New Sb 2 Se 3 based solar cell for achieving high efficiency -Theoretical modeling

Abstract

In this paper, we presented a numerical study of a CdS/Sb2Se3 mono junction solar cell (SC) using the SC Capacitive Simulator (SCAPS-1D). We validated an experimental work using a variety of Sb2Se3 experimental parameters, and the results showed excellent agreement between numerical and experimental J-V curves, yielding a PCE of 7.54% .To continue, we analyzed the impact of Sb2Se3 thin layer thickness, charge carrier concentration, bulk defect density, and interface defect (CdS/Sb2Se3) on solar cell characteristics. With the optimum Sb2Se3 layer thickness of 1.2 m, carrier concentration of 10 15 cm-3 , bulk defect of 10 13 cm-3 , and CdS/Sb2Se3 interface defect densities of 10 10 cm-2 , we were able to attain an efficiency of 16.62%, Jsc = 35.38 mA/cm 2 , Voc = 0.66 V, and FF = 70.33%. Finally, we investigated the insertion effect of n-GaAs (ETL) and P +-CuO HTL (BSF) on Sb2Se3 solar cell efficiency. The novel ITO/n-CdS/n-GaAs/p-Sb2Se3/p +-CuO HTL/Au heterostructure achieved a huge efficiency of 19.60%.

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…Ferdous et al 13 Raman et al used the architecture Al/CdS/Sb 2 Se 3 /Mo and the final PCE they obtained is 28.25%, V oc is 0.86 V, J sc is 37.90 mA/cm 2 , and FF is 86.84%. 14 Daoudi et al have reported PCE of 28.08%, FF of 88%, V oc of 1.07 V, and J sc of 29.53 mA/cm 2 . 15 With the structure CZTS/WS2/In2Se3, Kumar Dakua P et al have obtained a PCE of 22.96%.…”

“…The absorber's photogenerated excitons can reach the interfaces owing to their low binding energy and long diffusion lengths. In Figure5(A)-(D), the CuSbS 2 layer thickness varies from 0.05 μm to 0.2 μm and is plotted along the x-axis, and the carrier concentration varies from 10 16 cm À3 to 10 19 cm À3 and plotted along the y-axis 14,…”