New world record efficiency for Cu(In,Ga)Se<sub>2</sub> thin‐film solar cells beyond 20%

Jackson, Philip; Hariskos, Dimitrios; Lotter, E.; Paetel, Stefan; Wuerz, Roland; Menner, R.; Wischmann, Wiltraud; Powalla, Michael

doi:10.1002/pip.1078

Cited by 1,973 publications

(938 citation statements)

References 8 publications

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“…CIGS is of particular interest as the absorber material in thin-film photovoltaic cells, as it has a very high optical absorption coefficient 1 . Moreover, photovoltaic cells based on polycrystalline CIGS hold record conversion efficiencies in the category of thin-film cells, currently already exceeding 20%, both on glass substrates and on flexible substrates 2,3 . Photoluminescence spectra of CIS and CGS, e.g.…”

Section: Introductionmentioning

confidence: 99%

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Bekaert

Saniz

Partoens

et al. 2014

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Bekaert

Saniz

Partoens

et al. 2014

Phys. Chem. Chem. Phys.

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“…Schematic view and the SEM cross section of both precursors are shown in Fig. 1 With Cu top layer, the reactions (1), (2), and (3) can proceed. With Cu 2 Se top layer, the reactions (2) and (3) can proceed.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Cu2ZnSnSe4 Thin Films Selenized with Cu2-xSe/ SnSe2/ZnSe and Cu/SnSe2/ZnSe Stacks

Munir¹,

Jung²,

Ko³

et al. 2013

Korean. J. Mater. Res.

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Cu 2 ZnSn(S,Se) 4 material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in Cu(In,Ga)Se 2 solar cells. We were able to achieve a cell conversion efficiency to 4.7 % by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/ Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and SnSe 2 were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/SnSe 2 /ZnSe stack provided a uniform film with larger grains compared to that with Cu 2 Se/ SnSe 2 /ZnSe stack. Also, voids were not observed at the Cu 2 ZnSnSe 4 /Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a SnSe 2 environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to Cu 2 Se top-layer stack.

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“…Recently, laboratory efficiencies of over 20% have been reached with CuIn 1−x Ga x Se 2 (CIGS) solar cells [1], approaching those of Si technology, and very efficient cells on flexible substrates have also been demonstrated [2]. This makes CIGS the most promising thin-film type cells, albeit that very large scale application may be prevented by the limited resources in (and competitive markets for) In.…”

Section: Introductionmentioning

confidence: 99%

Assignment of capacitance spectroscopy signals of CIGS solar cells to effects of non-ohmic contacts

Lauwaert

Puyvelde

Lauwaert

et al. 2013

Solar Energy Materials and Solar Cells

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We report evidence for the idendification of the capacitance transients detected at room temperature for thin-film photovoltaic cells with CIGS absorbers as an additional non-ohmic contact in the structure with a time constant larger than that of the solar cell pn-jucntion. The N1 signal was recently interpreted as a back contact barrier for which the RC-like time constant is smaller than the time constant of the junction. In this work we unite these experimental observations in one model. Since for a Mo/CIGS/CdS/ZnO solar cell several interfaces are connected in series, we introduce the idea of modeling capacitance spectroscopy signals based on RC-circuits in series for each interface. It is shown that the distinct features observed in capacitance spectroscopy of CIGS solar cells can be mimicked using this circuit as an electrical model. The differential equation for this structure as a function of time is solved numerically. It is inherent to the model that the transients in such a structure are voltage transients over each of the interfaces and that the transients are coupled. These findings question the practical use of capacitance spectroscopy for direct measurement of defects in the absorber layer.

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New world record efficiency for Cu(In,Ga)Se₂ thin‐film solar cells beyond 20%

Cited by 1,973 publications

References 8 publications

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Characterization of Cu2ZnSnSe4 Thin Films Selenized with Cu2-xSe/ SnSe2/ZnSe and Cu/SnSe2/ZnSe Stacks

Assignment of capacitance spectroscopy signals of CIGS solar cells to effects of non-ohmic contacts

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New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20%

Cited by 1,973 publications

References 8 publications

Native point defects in CuIn1−xGaxSe2: hybrid density functional calculations predict the origin of p- and n-type conductivity

Native point defects in CuIn1−xGaxSe2: hybrid density functional calculations predict the origin of p- and n-type conductivity

Characterization of Cu2ZnSnSe4 Thin Films Selenized with Cu2-xSe/ SnSe2/ZnSe and Cu/SnSe2/ZnSe Stacks

Assignment of capacitance spectroscopy signals of CIGS solar cells to effects of non-ohmic contacts

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New world record efficiency for Cu(In,Ga)Se₂ thin‐film solar cells beyond 20%

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity

Native point defects in CuIn_1−xGa_xSe₂: hybrid density functional calculations predict the origin of p- and n-type conductivity