NIEL and damage correlations for high-energy protons in gallium arsenide devices

Messenger, S.; Walters, R.J.; Burke, E.A.; Summers, G.P.; Xapsos, M.A.

doi:10.1109/23.983182

Cited by 34 publications

(15 citation statements)

References 25 publications

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“…TRIM includes the Coulombic interactions, so it is not appropriate to use it directly for damage calculations for proton energies above the Coulomb threshold at 8 MeV or so, de-pending on the target material. It is a very useful code for the analysis of on-orbit solar-cell displacement damage for which low-energy particles are of interest [156], [157]. However, one can also calculate the primary recoil spectrum generated in a material by a given particle by other means, such as MCNP-x (e.g., see [158] and references therein) or GEANT [159] and either directly calculate the nonionizing energy loss for PKAs or utilize the treatments found in the TRIM code in order to calculate NIEL for the PKA spectrum.…”

Section: Further Progress In Niel Calculationsmentioning

confidence: 99%

Review of displacement damage effects in silicon devices

Srour

Marshall

2003

IEEE Trans. Nucl. Sci.

627

350

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This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

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Section: Further Progress In Niel Calculationsmentioning

confidence: 99%

Review of displacement damage effects in silicon devices

Srour

Marshall

2003

IEEE Trans. Nucl. Sci.

627

350

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“…Recently, Messenger et al have provided a successful methodology to compare nonionizing energy-loss to experimental results in GaAs devices [90].…”

Section: B Displacement Damage Effectsmentioning

confidence: 99%

Historical perspective on radiation effects in III-V devices

Weatherford

Anderson²

2003

IEEE Trans. Nucl. Sci.

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“…The most basic parameter of displacement damage is the non-ionizing energy loss (NIEL), which describes the rate at which an incident particle loses energy to displacive events. 16 " 18 The most common units of NIEL are MeVcm 2 /g. The displacement damage dose is given by NIEL times the particle fluence, O.…”

Section: Radiation Effectsmentioning

confidence: 99%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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NIEL and damage correlations for high-energy protons in gallium arsenide devices

Cited by 34 publications

References 25 publications

Review of displacement damage effects in silicon devices

Review of displacement damage effects in silicon devices

Historical perspective on radiation effects in III-V devices

Radiation Effects in Iii-v Semiconductor Electronics

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