A series of Nb, W, N and F:TiO 2 thin-film systems were grown by a combinatorial atmospheric pressure chemical vapour deposition (APCVD) process. Conditions were varied in each experiment to produce a series of films with compositional gradient. For each system, the electrical resistivity at a number of positions (up to 200 on each film) was screened using a high-throughput tool. This allowed easy identification of the material with the lowest electrical resistivity across a reservoir of combinatorially produced samples. The most conductive material within each system was analysed in depth by X-ray photoelectron spectroscopy, wavelength dispersive X-ray analysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-visible-NIR spectroscopy and Hall effect measurements. The most electrically conductive materials are found in the F:TiO 2 [F s z 4-5%, r ¼ 0.21 U cm, m ¼ 3.6 cm 2 V À1 s À1 , n ¼ 8.1 Â 10 18 cm À3 ] and Nb:10 18 cm À3 ] systems. The electrical resistivities reported for Nb:TiO 2 and W:TiO 2 are the best to date for materials grown by APCVD. Extensive comparisons with the literature are made and summarised in this report.