Nitrobenzyl ester chemistry for polymer processes involving chemical amplification

Houlihan, F. M.; Shugard, A.; Gooden, Robert; Reichmanis, Elsa

doi:10.1021/ma00185a019

Cited by 81 publications

(59 citation statements)

References 6 publications

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“…The photochemistry of acid generators such as onium salts, 45,46) halogen compounds, 47) nitrobenzyl esters, 48) alkylsulfonates, 49) imidosulfonates, 50) and disulfones 51) has been investigated. In particular, the decomposition mechanisms of acid generators through their excited states, which are excited directly or through energy transfer from the excited states of polymers, have been well studied.…”

Section: Introductionmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

336

319

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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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Section: Introductionmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

336

319

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“…6. class of compounds is well characterized [13]. The PBG candidates that were synthesized are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Photobase generator assisted pitch division

Bates

Cho

et al. 2010

SPIE Proceedings

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The drive to sustain the improvements in productivity that derive from following Moore's law has led the semiconductor industry to explore new technologies that enable production of smaller and smaller features on semiconductor device. Pitch division techniques and double exposure lithography are approaches that print features beyond the fundamental resolution limit of state-of-art lenses by modifying the lithographic process. This paper presents a new technique that enables pitch division in the printing of gratings using only a single exposure that is fully compatible with the current manufacturing tools. This technique employs a classical photoresist polymer together with a photoactive system that incorporates both a photoacid generator (PAG) and a photobase generator (PBG). The PBG is added to the resist formulation in higher molar concentration than the PAG, but has a base production rate that is slower than the acid production rate of the PAG. The PBG functions as a dose-dependent base quencher, which neutralizes the acid in high dose exposure regions but not in the low dose regions. This photoactive system can be exploited in the design of both positive tone and negative tone resist formulations that provide a developed image of a grating that is twice the frequency of the grating on the mask. A simulation of this process was performed for a 52 nm line and space pattern using PROLITH and customized codes. The results showed generation of a 26 nm half pitch relief image after development. Through this new technique, a 45 nm half pitch line and space pattern was experimentally achieved with a mask that produces a 90 nm half pitch aerial image. This corresponds to a k 1 factor of 0.13. The principles, the materials design and the first lithographic evaluations of this system are reported.

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“…The PBG was synthesized according to a published procedure [16]. The mechanism of the photolysis that produces base in this class of compounds is well characterized [17]. The structure of the PBG that was synthesized is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%