Noise reduction effect and analysis through serial multiple sampling in a CMOS image sensor with floating diffusion boost-driving

Abstract

We have developed a 1/2.3-in. 10.3 mega pixel back-illuminated CMOS image sensor utilizing serial multiple sampling. This sensor achieves an RMS random noise of 1.3e− and row temporal noise (RTN) of 0.19e−. Serial multiple sampling is realized with a column inline averaging technique without the need for additional processing circuitry. Pixel readout is accomplished utilizing a 4-shared-pixel floating diffusion (FD) boost-driving architecture. RTN caused by column parallel readout was analyzed considering the transfer function at the system level and the developed model was verified by measurement data taken at each sampling time. This model demonstrates the RTN improvement of −1.6 dB in a parallel multiple readout architecture.

Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors

“…For Chip-A described in Figures 1a and 2a, the voltages before and after the charge transfer are sampled by SHR and SHS signals for CDS operation. On the other hand, the Chip-B in Figures 1b and 2b is designed to implement the correlated multiple sampling (CMS) for the purpose of noise reduction [42][43][44][45][46][47][48][49]. The reset and signal voltages are sampled twice by the pairs of pulses (SHR, SHR d ) and (SHS, SHS d ), respectively.…”