1995
DOI: 10.1103/physrevb.51.14233
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Nonequilibrium dynamics of hot carriers and hot phonons in CdSe and GaAs

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Cited by 69 publications
(57 citation statements)
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“…[54][55][56] This bottleneck effect usually occurs in highly excited semiconductors and has recently been observed in perovskites in the presence of a nonequilibrium LO-phonon population that leads to reduced net LO-phonon emission and reheating of carriers, thus slowing the HC cooling. [54][55][56] This bottleneck effect usually occurs in highly excited semiconductors and has recently been observed in perovskites in the presence of a nonequilibrium LO-phonon population that leads to reduced net LO-phonon emission and reheating of carriers, thus slowing the HC cooling.…”
Section: Hot-phonon Bottleneck Effectmentioning
confidence: 99%
“…[54][55][56] This bottleneck effect usually occurs in highly excited semiconductors and has recently been observed in perovskites in the presence of a nonequilibrium LO-phonon population that leads to reduced net LO-phonon emission and reheating of carriers, thus slowing the HC cooling. [54][55][56] This bottleneck effect usually occurs in highly excited semiconductors and has recently been observed in perovskites in the presence of a nonequilibrium LO-phonon population that leads to reduced net LO-phonon emission and reheating of carriers, thus slowing the HC cooling.…”
Section: Hot-phonon Bottleneck Effectmentioning
confidence: 99%
“…In GaAs quantum wells, it is well known that the cooling rate of the hot-carrier and/or hot-phonon effect depends strongly on excitation intensity [10,11]. In CdSe thin crystal, the large reduction in hot-carrier energy relaxation rate caused by hot-phonon effects was observed [13,14], and this energy loss rate as a result of the hot-phonon effects in CdSe is ten times larger than that in GaAs [16].…”
Section: Introductionmentioning
confidence: 91%
“…11,29,30 This interaction favors optical phonons near the center of the Brillouin zone ͑BZ͒ since the rate matrix elements are proportional to 1 / q 2 , where q is the phonon wave vector. 31 If excitation of carriers takes place in the ⌫ valley, the photoexcited carrier density is high ͑տ10 20 cm −3 ͒ and the energy of the photoexcited carriers is larger than that of the side valley minimums ͑L and/or X͒, the electrons can scatter quickly ͑on the order of 100 fs͒ to these valleys. 51 The electrons in the side valleys return back slowly ͑on a time scale Ͼ1 ps͒ to the ⌫ valley.…”
Section: ‫ץ‬ ‫ץ‬Zmentioning
confidence: 99%