2004
DOI: 10.1134/1.1788761
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Nonequilibrium electron distribution functions in a semiconductor plasma irradiated with fast ions

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Cited by 7 publications
(14 citation statements)
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“…See also [463][464][465][466][467][468][469][470][471][472][473][474][475][476][477][478][479][480]513]. Fig.…”
Section: Plasmamentioning
confidence: 99%
“…See also [463][464][465][466][467][468][469][470][471][472][473][474][475][476][477][478][479][480]513]. Fig.…”
Section: Plasmamentioning
confidence: 99%
“…Examples that display common features of the process under investigation and for the parameters that are rather far from those considered analytically are given. Considering the experimental situation on irradiation of a thin GaAs film by a fast ion beam [8], we provide a comparison of the results obtained in the experiment with those obtained by numerical simulation. Then we conduct the qualitative illustrative comparison of the NE electron distributions obtained numerically with those adapted from [7].…”
Section: The Mechanism Of Particle Distribution Formation In the Presmentioning
confidence: 99%
“…Some experimental data on the emission current from metals irradiated by lasers can be reasonably explained by the mechanism for the formation of NE distributions [4][5][6][7][8]. It was shown [3,6,8] that, for a semiconductor plasma in the energy range E −E F > E F (where E F is the Fermi energy) a power-like distribution with a non-zero flux of energy or particles in momentum space can be established. This NE distribution function is formed both due to collisions with electrons whose energy is in the range E−E F > E F and background (equilibrium) electrons.…”
Section: Introduction and Statement Of The Problemmentioning
confidence: 99%
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