Nonequilibrium transport and optical properties of model metal–Mott-insulator–metal heterostructures

Okamoto, Satoshi

doi:10.1103/physrevb.76.035105

Cited by 37 publications

(59 citation statements)

References 54 publications

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“…Along this line, Okamoto investigated the current-voltage (I-V ) characteristics of heterostructures that consist of Mottinsulator layers sandwiched by metallic leads by combining the dynamical mean-field theory with the Keldysh Green's function technique. 20,21 Ajisaka et al studied the I-V characteristics of an electron-phonon system coupled with two reservoirs by a field-theoretical method.…”

Section: -12mentioning

confidence: 99%

Crossover from bias-induced to field-induced breakdown in one-dimensional band and Mott insulators attached to electrodes

Tanaka

Yonemitsu

2011

Phys. Rev. B

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Nonequilibrium states induced by an applied bias voltage (V ) and the corresponding currentvoltage characteristics of one-dimensional models describing band and Mott insulators are investigated theoretically by using nonequilibrium Green's functions. We attach the models to metallic electrodes whose effects are incorporated into the self-energy. Modulation of the electron density and the scalar potential coming from the additional long-range interaction are calculated self-consistently within the Hartree approximation. For both models of band and Mott insulators with length LC , the bias voltage induces a breakdown of the insulating state, whose threshold shows a crossover depending on LC . It is determined basically by the bias V th ∼ ∆ for LC smaller than the correlation length ξ = W/∆ where W denotes the bandwidth and ∆ the energy gap. For systems with LC ≫ ξ, the threshold is governed by the electric field, V th /LC , which is consistent with a Landau-Zener-type breakdown, V th /LC ∝ ∆ 2 /W . We demonstrate that the spatial dependence of the scalar potential is crucially important for this crossover by showing the case without the scalar potential, where the breakdown occurs at V th ∼ ∆ regardless of the length LC .

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Section: -12mentioning

confidence: 99%

Crossover from bias-induced to field-induced breakdown in one-dimensional band and Mott insulators attached to electrodes

Tanaka

Yonemitsu

2011

Phys. Rev. B

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“…XA and XMCD spectra of the Ru M 3, 2 edge showed a dichroism signal compatible with ruthenium in an octahedral environment expected in SRO ( Figure XX). [16] Magnetic measurements were taken with a SQUID magnetometer as a function of field and temperature. We found that for all substrate types, (110) films had larger moments than (001) oriented films.…”

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confidence: 99%

Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain

Grutter

Wong

Arenholz

et al. 2010

Journal of Applied Physics

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Abstract:Epitaxial SrRuO 3 thin films were grown on SrTiO 3 , (LaAlO 3 ) 0.3 (SrAlO 3 ) 0.7 and LaAlO 3 substrates inducing different biaxial compressive strains. Coherently strained SrRuO 3 films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 µ B per formula unit. A comparison of (001) and (110) SrRuO 3 films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

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“…The usual way to treat such steady state situation (see, e.g. 37,38 ) is to start at t = −∞ with three decoupled (v l = v r = 0) systems consisting of the two leads plus the central region which are separately in equilibrium at different chemical potentials and temperatures. Then one switches on the hybridisation and waits until a steady state is reached.…”

Section: A Modelmentioning

confidence: 99%

Thermoelectric properties of a strongly correlated layer

et al. 2017

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In this paper we investigate the effect of strong electronic interactions on the thermoelectric properties of a simple generic system, consisting of a single correlated layer sandwiched between two metallic leads. Results will be given for the linear response regime as well as beyond, for which a full nonequilibrium many-body calculation is performed, based on nonequilibrium dynamical mean-field theory (DMFT). As impurity solver we use the auxiliary master equation approach, which addresses the impurity problem within a finite auxiliary system consisting of a correlated impurity, a small number of uncorrelated bath sites and Markovian environments. For the linear response regime, results will be presented for the Seebeck coefficient, the electrical conductance and the electronic contribution to the thermal conductance. Beyond linear response, i.e. for finite differences in the temperatures and/or the bias voltages in the leads, we study the dependence of the current on various model parameters, such as gate voltage and Hubbard interaction of the central layer. We will give a detailed parameter study as far as the thermoelectric efficiency is concerned. We find that strong correlations can indeed increase the thermopower of the device. In addition, some general theoretical requirements for an efficient thermoelectric device will be given.

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Nonequilibrium transport and optical properties of model metal–Mott-insulator–metal heterostructures

Cited by 37 publications

References 54 publications

Crossover from bias-induced to field-induced breakdown in one-dimensional band and Mott insulators attached to electrodes

Crossover from bias-induced to field-induced breakdown in one-dimensional band and Mott insulators attached to electrodes

Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain

Thermoelectric properties of a strongly correlated layer

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