Nonlinear Compact Thermal Model of the IGBT Dedicated to SPICE

Górecki, Krzysztof; Górecki, Paweł

doi:10.1109/tpel.2020.2995414

Cited by 43 publications

(41 citation statements)

References 49 publications

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“…It must be remarked that nonlinear thermal effects play a relevant role in typical applications of SiC devices [36]. While other techniques allow building thermal networks accounting for the temperature dependence of the thermal conductivity [37], in this work a nonlinear correction applied through the Kirchhoff's transformation [38] was required. By exploiting the TEOL, the TFB can be employed in circuit simulators to enable the ET feedback.…”

Section: Fantastic-based Thermal Modeling Including Nonlinear Effectsmentioning

confidence: 99%

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

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Section: Fantastic-based Thermal Modeling Including Nonlinear Effectsmentioning

confidence: 99%

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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“…The form of this model corresponds to a non-linear thermal model of semiconductor devices proposed in [28]. In the described model, differences in the value of temperature of the core and each winding are taken into account.…”

Section: Non-linear Thermal Modelmentioning

confidence: 99%

SPICE-Aided Compact Electrothermal Model of Impulse Transformers

Górecki

Górski²

2021

Applied Sciences

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This article proposes a new form of compact electrothermal model of impulse transformers. The proposed model is dedicated for use with SPICE and it is formulated in the network form. It simultaneously takes into account electrical, thermal, and magnetic phenomena occurring in the considered device. Nonlinearity of the core magnetization characteristics and nonlinearity of the heat transfer efficiency are taken into account in this model. The form of the proposed model is shown. Equations of the presented model are given. Experimental verification of the proposed model is performed for selected impulse transformers. Selected results of the performed investigations are presented.

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“…The transfer of heat generated in electronic devices to the surroundings takes place by means of three mechanisms [10]: heat conduction, convection, and radiation. As indicated in [46,47], the efficiency of each mentioned way depends on the ambient temperature and internal temperature of the analyzed device.…”

Section: Introductionmentioning

confidence: 99%

Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices

Posobkiewicz

Górecki

2021

Electronics

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The paper presents some investigation results on the properties of forced cooling systems dedicated to electronic devices. Different structures of such systems, including Peltier modules, heat sinks, fans, and thermal interfaces, are considered. Compact thermal models of such systems are formulated. These models take into account a multipath heat transfer and make it possible to compute waveforms of the device’s internal temperature at selected values of the power dissipated in the device. The analytical formulas describing the dependences of the thermal resistance of electronic devices co-operating with the considered cooling systems on the power dissipated in the cooled electronic device and the power feeding the Peltier module and the speed of airflow caused by a fan are proposed. The correctness of the proposed models is verified experimentally in a wide range of powers dissipated in electronic devices operating in different configurations of the used cooling system.

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Nonlinear Compact Thermal Model of the IGBT Dedicated to SPICE

Cited by 43 publications

References 49 publications

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

SPICE-Aided Compact Electrothermal Model of Impulse Transformers

Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices

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