2018
DOI: 10.1364/prj.6.000b43
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Nonlinear gallium phosphide nanoscale photonics [Invited]

Abstract: We introduce a nanoscale photonic platform based on gallium phosphide. Owing to the favorable material properties, peak power intensity levels of 50 GW∕cm 2 are safely reached in a suspended membrane. Consequently, the field enhancement is exploited to a far greater extent to achieve efficient and strong light-matter interaction. As an example, parametric interactions are shown to reach a deeply nonlinear regime, revealing cascaded fourwave mixing leading to comb generation and high-order soliton dynamics.

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Cited by 32 publications
(18 citation statements)
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“…The values of n 2 measured for the infrared wavelengths are one order of magnitude lower than the first estimate. [ 13,14 ] The first value was applied to the computations. In any case, the values of effective n20.16emnormaleff calculated in the present work can be scaled for adoption to other magnitude of the second‐order index of refraction of bulk GaP.…”
Section: Fdtd Simulation Detailsmentioning
confidence: 99%
“…The values of n 2 measured for the infrared wavelengths are one order of magnitude lower than the first estimate. [ 13,14 ] The first value was applied to the computations. In any case, the values of effective n20.16emnormaleff calculated in the present work can be scaled for adoption to other magnitude of the second‐order index of refraction of bulk GaP.…”
Section: Fdtd Simulation Detailsmentioning
confidence: 99%
“…Moreover, in both cases, propagation loss was insufficient to observe strong χ (3) effects. Indeed, to date, the χ (3) nonlinearity of GaP has only been measured with ultra-short light pulses at optical wavelengths [23,24], and promising applica- FIG. 1.…”
mentioning
confidence: 99%
“…This is not the case for wide-bandgap III-V semiconductors such as aluminum nitride (AlN), gallium nitride (GaN) or gallium phosphide (GaP). Recently, many efforts have focused on the realization of an integrated platform using GaP as a nonlinear medium [1][2][3][4][5]. Indeed, this material with a refractive index of 3.05 and transparency for wavelengths longer than 0.55 µm also displays large χ (2) and χ (3) coefficients, making this semiconductor an excellent candidate for the next generation of nonlinear systems on a chip.…”
Section: Introductionmentioning
confidence: 99%