Nonlinear optical effect upon the irradiation of GaN with cluster ions

Karaseov, P. A.; Karabeshkin, K. V.; Titov, A.I.; Shilov, V. B.; Ermolaeva, G. M.; Маслов, В. Г.; Орлова, А. О.

doi:10.1134/s1063782614040125

Cited by 10 publications

(5 citation statements)

References 23 publications

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“…2 (a) shows the measured decay of the PL signal spectrally integrated over 360 nm peak (see Refs. 30,31) for GaN targets irradiated by monatomic and molecular ions to the dose of 0.8×10 -3 DPA. For clarity in the figure, only one of every five experimental points is shown by markers.…”

Section: Resultsmentioning

confidence: 99%

“…Two peaks were found at room temperature on the photoluminescence spectra (not shown), one at 360 nm and another one-wide peak centered at 550 nm [30]. Band edge recombination dynamics was studied by time-resolved photoluminescence using 2 ps optical pulses from a double cascade compressed Nd-YAG laser with a 340 nm central wavelength.…”

Section: Methodsmentioning

confidence: 99%

“…This criterion provides the reference value t D ~ 270 ps for as-grown samples. A more detailed experimental setup description can be found elsewhere [30].…”

Section: Methodsmentioning

confidence: 99%

“…Structural defects act as a nonradiative sinks for photoexcited carriers, and the change observed in carrier dynamics will indicate the amount of damage formed. Figure 2(a) shows the measured decay of the PL signal spectrally integrated over 360 nm peak (see [30,31]) for GaN targets irradiated by monatomic and molecular ions to the dose of 0.8 × 10 −3 DPA. For clarity in the figure, only one of every five experimental points is shown by markers.…”

Section: Low Dose Regime Photoluminescence Decay Studymentioning

confidence: 99%

“…Most of these works were focused on investigation of the ME during ion implantation of Ge (earlier publications) and Si. A number of experimental studies of the ME was also performed for ion irradiation of GaN [17,29,30], as well as other semiconductor materials. The results have confirmed the manifestation of ME in a wide range of bombardment conditions of semiconductors by molecular ions, which motivate a detailed investigation of the mechanisms of this phenomenon.…”

Section: Introductionmentioning

confidence: 99%

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Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Karaseov

Karabeshkin

Titov

et al. 2017

J. Phys. D: Appl. Phys.

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An investigation of mechanisms of enhancement of irradiation-induced damage formation in GaN under molecular in comparison to monatomic ion bombardment is presented. Ionimplantation-induced effects in wurtzite GaN bombarded with 0.6 keV/amu F, P, PF2, and PF4 ions at room temperature are studied experimentally and by cumulative MD simulation in the correct irradiation conditions. In the low dose regime, damage formation is correlated with a reduction in photoluminescence decay time, whereas in the high dose regime, it is associated with the thickness of the amorphous layer formed at the sample surface. In all the cases studied, a switch to molecular ion irradiation from bombardment by its monatomic constituents enhances the damage accumulation rate. Implantation of heavy Ag ion, having approximately the same mass as the PF4 molecule, is less effective in surface damage formation, but leads to noticeably higher damage accumulation in the bulk.. The cumulative MD simulations do not reveal any significant difference in the total amount of both point defects and small defect clusters produced by light monatomic and molecular ions. On the other hand, increased production of large defect clusters by molecular PF4 ions is clearly seen in the vicinity of the surface. Ag ions produce almost the same number of small, but more large defect clusters compare to the others. This findings show that the enhancement of stable damage formation in GaN under molecular, as well as under heavy monatomic ion irradiation, can be related to the higher formation probabilityof large defect clusters.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

“…This criterion provides the reference value t D ~ 270 ps for as-grown samples. A more detailed experimental setup description can be found elsewhere [30].…”

Section: Methodsmentioning

confidence: 99%

Section: Low Dose Regime Photoluminescence Decay Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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