Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

Abstract

The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas–Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.

Nonlinear optical rectification of GaAs/Ga1–x Al x As quantum dots with Hulth-en plus Hellmann confining potential

“…High intensity and strong coherence are the characteristics of laser beams. [1][2][3][4] Moreover, generation of nonlinear optical effects requires beams with these characteristics to react with materials. When the laser was born, the theory of nonlinear optics also entered a rapid writing stage.…”

Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs

“…For this reason, several studies have focused on the optical properties of δ-doped QWs due to their large potential application for optoelectronic devices. [3,4,[6][7][8][20][21][22][23][24][25][26][27]. For instance, Sari et al [28] investigated the nonlinear optical properties in asymmetric n-type double δ-doped GaAs quantum well.…”