Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

Abstract

We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10 −14 -10 −12 m 2 •V −2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.