Abstract:The paper presents the design, modelling and manufacturing of a new type of MMlC a nonlinear transmission line which consists of 45 Schottky diodes monolithically integrated in a CPW based on GaAs. A four mask technological process was developed, using a special hyperabrupt n-n+profile on a semiinsulating GaAs substrate.
“…The GaAs NLTL is a monolithic circuit, consisting of CPW TL with a high characteristic impedance of Z 0 and periodically at spacing L distributed PSVDs with reverse bias and exhibits nonlinearity from voltage-variable capacitance of PSVD and dispersion characterized by Bragg cutoff frequency from the periodic network. [12,13] The NLTLs design procedure, based on the large-signal model of PSVD, is similar to one adopted by Li and is followed as that in Ref. [14].…”
A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line * Huang Jie(黄 杰) a)b) † , Dong Jun-Rong(董军荣) a) , Yang Hao(杨 浩) a) , Zhang Hai-Ying(张海英) a) , Tian Chao(田 超) a) , and Guo Tian-Yi(郭天义) a)
“…The GaAs NLTL is a monolithic circuit, consisting of CPW TL with a high characteristic impedance of Z 0 and periodically at spacing L distributed PSVDs with reverse bias and exhibits nonlinearity from voltage-variable capacitance of PSVD and dispersion characterized by Bragg cutoff frequency from the periodic network. [12,13] The NLTLs design procedure, based on the large-signal model of PSVD, is similar to one adopted by Li and is followed as that in Ref. [14].…”
A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line * Huang Jie(黄 杰) a)b) † , Dong Jun-Rong(董军荣) a) , Yang Hao(杨 浩) a) , Zhang Hai-Ying(张海英) a) , Tian Chao(田 超) a) , and Guo Tian-Yi(郭天义) a)
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