Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film

Lin, Meng Han; Wu, Ming Chi; Lin, Chun Chieh; Tseng, Tseung‐Yuen

doi:10.1080/00150190902870101

Cited by 11 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…10 nm thick Ru thin films working as a bottom electrode was deposited by ECR sputtering using a Ru metal target without external heating on an insulating 100 nm thick SiO 2 layer formed by thermal oxidation on a Si (100) substrate. After that, a 30 nm thick BiTiO thin film was deposited at 450 °C by ECR sputtering 35,36) using a 4N-purity Bi-Ti-O ceramic target (Bi: Ti = 4:3) and Ar/O 2 gases. A 10 nm thick Ru tope electrode was deposited by ECR sputtering to complete the Ru (10 nm)/ BiTiO(30 nm)/Ru (10 nm) stack, and then patterned using a shadow mask and conventional photolithography processes to form squares of various sizes.…”

Section: Experimental Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Study of a reversible resistive switching mechanism in bismuth titanate deposited by electron cyclotron resonance sputtering

Jin

Suemasu

2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We studied the temperature dependence of the reversible resistance switching in the bismuth titanate (BiTiO) film deposited by electron cyclotron resonance sputtering. The reversible resistance switching was observed at 5 K in both the low resistance state (LRS) and high resistance state (HRS) in the film. The resistance in the LRS decreased with increasing temperature, and remained unchanged regardless of an electrode-pad area. On the other hand, the resistance in the HRS increased with temperature, exhibiting the electrode-pad area dependence. From the crosssectional transmission electron microscope image, nanocrystalline Bi 4 Ti 3 O 12 particles were uniformly distributed in the BiTiO film. We proposed the mechanism of reversible resistance switching in BiTiO, that is, (1) the filament of conduction path was generated along the grain boundaries of the nanocrystalline particles by electroforming, (2) the LRS was switched-on, and (3) the filament was cut off by applying reverse bias voltages, switching back to the HRS. We verified the conduction of three-dimensional variable range hopping in the HRS.

show abstract

Section: Experimental Methodsmentioning

confidence: 99%

“…34) Similar bistable resistive switching behaviors were obtained by sol-gel derived BiTiO films. 35) However, switching mechanism in BiTiO film has yet to be clarified. The aim of this article is to clarify the mechanism of reversible resistance switching in BiTiO films.…”

Section: Introductionmentioning

confidence: 99%

Study of a reversible resistive switching mechanism in bismuth titanate deposited by electron cyclotron resonance sputtering

Jin

Suemasu

2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[ 335,336 ] Long retention tests (≥10 5 s) collected at ≥85 °C have been reported for solution‐based metal oxide RRAMs. [ 98,142,144,172,276 ] Wang and co‐workers reported ITO/MgTiNiO x /Al S‐RRAM devices with long retention data at 85 °C ( Figure ). [ 144 ] These results show the capability of S‐RRAM devices to project trends retention up to 10 years as achieved in devices produced by vacuum‐based techniques.…”

Section: Figures Of Merit and Current Challenges Of S‐rrammentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

View full text Add to dashboard Cite

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

show abstract

“…However, only a limited number of the materials with nonpolar switching behaviour have been observed so far. For example, Pt/MgO/Pt [11], Pt/BiTiO 3 /LaNiO 3 /Pt [12], Al/TaO x /Cr [13], Pt/BiFe 1−x Mn x O 3 /Pt [14], etc. Figure 4 shows a typical I-V of nonpolar switching phenomenon.…”

Section: Principles Of Rsmentioning

confidence: 99%

Development of ferroelectric oxides based resistive switching materials

Guan

Sun

Wan

et al. 2017

Materials Science and Technology

View full text Add to dashboard Cite

Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories, as a consequence of its high density, outstanding scalability, and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching (RS) materials and devices. It highlights the various ferroelectric oxide materials with RS behaviour and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high-density data storage applications is addressed.

show abstract

Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film

Cited by 11 publications

References 13 publications

Study of a reversible resistive switching mechanism in bismuth titanate deposited by electron cyclotron resonance sputtering

Study of a reversible resistive switching mechanism in bismuth titanate deposited by electron cyclotron resonance sputtering

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Development of ferroelectric oxides based resistive switching materials

Contact Info

Product

Resources

About