2009 IEEE International Electron Devices Meeting (IEDM) 2009
DOI: 10.1109/iedm.2009.5424386
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Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon

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“…Several semiconductor materials have been tried out to make HVTFT devices. Amorphous Si and poly-Si HVTFTs have been studied since the 1980s 8 9 10 11 12 . Martin et al .…”
mentioning
confidence: 99%
“…Several semiconductor materials have been tried out to make HVTFT devices. Amorphous Si and poly-Si HVTFTs have been studied since the 1980s 8 9 10 11 12 . Martin et al .…”
mentioning
confidence: 99%