Novel Abrasion-Free CMP Technology with High Performance Polishing Slurry

Probing the Mechanisms of Metal CMP Using Tribo-Electroanalytical Measurements: Results for a Copper/Malonate System

“…The elimination of abrasive particles in this study is based on the numerous advantages of abrasive-free CMP (defect reduction, slurry shelf-life extension, and simplified waste management, in particular) as noted by previous authors. [5][6][7] In addition to MA (C 3 H 4 O 4 , a primary complexing agent), the experimental slurry employed in this work includes: Sodium percarbonate, SPC (Na 2 H 3 CO 6 , an oxidizer), and sodium bicarbonate (a pH adjusting secondary complexer). The benefits of using SPC as an oxidizer in CMP slurries have been discussed in our earlier reports.…”