Novel concept for efficient THz-emitters based on quasi-ballistic transport in an asymmetric superlattice

Eckardt, M.; Schwanhäußer, Anja; Renner, F.; Robledo, Lucio; Friedrich, A.; Pohl, P.; Kiesel, P.; Malzer, S.; Döhler, G. H.; Driscoll, D. C.; Hanson, M.; Gossard, A. C.

doi:10.1016/s1386-9477(02)00912-8

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…These ErAs particles placed at p-n junctions were demonstrated to improve performance in multijunction solar cells by reducing the voltage lost across the tunnel junctions between cells [42]. These tunnel junctions have also been employed by Dohler and coworkers in a photomixer based on ballistic travel across a series of pin diodes connected together with tunnel junctions [43][44][45][46][47][48][49].…”

Section: Tunnel Junction Applicationsmentioning

confidence: 99%

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

Hanson

Bank

Zide

et al. 2007

Journal of Crystal Growth

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Section: Tunnel Junction Applicationsmentioning

confidence: 99%

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

Hanson

Bank

Zide

et al. 2007

Journal of Crystal Growth

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“…Monte Carlo-simulation-data [3] indicates that for fields of 10..20 kV /cm the electrons can travel a distance of 150 nm within 0.5 ps, allowing them to follow the THz-photomixing excitation, before being scattered into side-valleys. Electrons which are accelerated by an electric field are scattered from the Γ-valley into the L-or X-side-valleys as soon as they gain the corresponding threshold kinetic energy for this process.…”

Section: The Nipnip-thz-emitter-conceptmentioning

confidence: 99%

The nipnip-THz-emitter: photomixing based on ballistic transport

Renner¹,

Klar²,

Malzer³

et al. 2005

AIP Conference Proceedings

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We report on a novel concept for THz-photomixers based on quasi-ballistic transport in an asymmetric nipnipdoping-superlattice. Due to tansport-optimized i-layers the emitted powers are not transit-time-limited up to 1 T Hz. Furthermore the capacitance and hence the RC-roll-off is minimized by increasing the number of pin-periods. The frequencydependence of the nipnip-emitter proofs to be superior to corresponding pin-photomixers.

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“…Therefore, the ilayer-lengths are chosen approx. 200nm, leading to transit-time frequency ν tr ≈ 1 THz [19,20]. Thus, the emitted THzpower is not transit-time limited up to 1 THz.…”

mentioning

confidence: 99%

Optical far-IR wave generation - state-of-the-art and advanced device structures

Krozer¹,

Leone

Roskos

et al. 2004

SPIE Proceedings

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A recent study initiated by the European Space Agency aimed at identifying the most promising technologies to significantly improve on the generation of coherent electromagnetic radiation in the THz regime. The desired improvements include, amongst others, higher output powers and efficiencies at increasingly higher frequencies, wider tunability and miniaturization. The baseline technologies considered revolve around Photomixing and novel laser based technologies compared to all electronic techniques. Some of the most significant findings will be presented together with technological developments and experimental results selected for medium to short term development. These technologies include advanced p-i-n photomixer with superlattice structures and, THz quantum cascade lasers. Recent results achieved in these fields will be put into the potential perspective for the respective technology in the future.

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Novel concept for efficient THz-emitters based on quasi-ballistic transport in an asymmetric superlattice

Cited by 7 publications

References 3 publications

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

The nipnip-THz-emitter: photomixing based on ballistic transport

Optical far-IR wave generation - state-of-the-art and advanced device structures

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