Abstract:HIGHLIGHTS A novel method was demonstrated for the production of SiC micro and nanopatterns Patterning and SiC compound formation happened in one step at room temperature The SiC formation was proved by AES depth profiling Two different patterns were presented The method can be considered as a possibility to fabricate SERS substrates
“…Harbsmeier et al have shown that ion bombardment can induce solid state reaction in Si&C mixture [17]. Racz et al showed that SiC nano-layer can be produced by IBM at room temperature [18,19].…”
“…Harbsmeier et al have shown that ion bombardment can induce solid state reaction in Si&C mixture [17]. Racz et al showed that SiC nano-layer can be produced by IBM at room temperature [18,19].…”
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