Numerical and experimental study of stochastic resistive switching

Abstract

In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of external Gaussian noise to a small amplitude driving signal yields a contrast ratio between low- and high-resistance states, comparable to that obtained by the application of a large amplitude noiseless signal. Furthermore, excellent agreement between numerical simulation and measurement allows us to study resistive switching under varying input conditions and, thus, properly characterize the beneficial role of noise. We believe these results might be of relevance in the area of memory devices where the large scale of electronic integration renders the presence of noise unavoidable.

Memristors under the influence of noise and temperature

“…They found that, under certain conditions, the contrast between lowand high-resistive states is enhanced when some amount of internal noise, inherent to the sample, is present in the system. Recently, experiments on manganite samples have shown that external noise has a beneficial effect during the pulsing protocol [8,9]. As such, the scope of this work is to further study the effect of electrical noise and temperature on a memristive system by means of experimental observation and numerical analysis.…”

Changing the state of a memristive system with white noise

“…A previous study has indeed shown that the hysteresis of memristive elements can be induced by white noise of appropriate intensity even at very low frequencies of the external driving field 16 . Recently, this prediction was confirmed experimentally 19 . In this work, we consider the circuit shown in Fig.…”

“…Another source of noise is the input noise that was considered by several authors 16,19 . A previous study has indeed shown that the hysteresis of memristive elements can be induced by white noise of appropriate intensity even at very low frequencies of the external driving field 16 .…”

Optimal condition of memristance enhancement circuit using external voltage source

“…Introducing linear functions as discussed in this paper allows one to obtain optimal conditions for any device models of memristors. Also, the excellent agreement between simulation 33 and experiment 34 has been reported in the scheme of stochastic resonance. Modulators using memristors have been verified in SPICE simulations.…”