Numerical investigation on the batch characteristics of liquid encapsulated vertical Bridgman crystal growth

Time-dependent magnetic field influence on GaAs crystal growth by vertical Bridgman method

“…As stated in Ref. [9], a plateau is not reached in this particular configuration, making the growth unsteady, and our calculations confirm that. Pseudo-steady growth mode can be achieved by using sufficiently long ampoules with high height-to-radius aspect ratio for which confinement effects may be neglected.…”

“…Domain boundaries are assumed to be perfect electric insulators; however, both phases of the material have finite (and different, in general case) electrical conductivities. The model of flatbottom ampoule is considered [9].…”

“…And, as stated in Ref. [9], VB crystal growth is essentially a time-dependent process in itself, and a dynamic magnetic field may further increase its time dependence under certain conditions. This is especially true for complex ampoule shapes (coned bottom and/or convex top, for example) with low height-to-diameter ratio.…”

Grain control in directional solidification of photovoltaic silicon

“…From the fundamental heat transfer point of view, the solidification front is perpendicular to the heat flux. Therefore, for DS the easiest way to get a convex front is to push the interface to the hot zone [28] or to better insulate the crucible to avoid the heat loss from the side wall [23,24]. In the previous study by Yeh et al [24], alumina felt was used to insulate the crucible.…”

Multicrystalline Silicon Crystal Growth for Photovoltaic Applications

“…Again, this could be achieved through the hot-zone design. This concept is not new and has been used in the vertical Bridgman crystal growth for years; a convex interface could be obtained by adjusting its relative interface position with the adiabatic zone [75]. To do this, the control of heat flow is important.…”