Numerical simulation and optimization of a silicon clathrate-based solar cell n-Si136/p-Si2 using SCAPS-1D program

Mahammedi, Nassim Ahmed; Gueffaf, Hamza; Lagoun, Brahim; Ferhat, M.

doi:10.1016/j.optmat.2020.110043

Cited by 19 publications

(2 citation statements)

References 45 publications

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“…Because of the low recombination rate and better EQE performance, a very high value of PCE was obtained. Hence, the obtained outcomes are found to be better than previously published experimental and theoretical results [14][15][16][110][111][112][113][114][115][116][117][118][119][120][121][122][123][124][125][126][127][128]. The table 5 demonstrates the merit of proposed solar cell by comparing its PCE with the already reported solar cell configurations.…”

Section: Influence Of Interface States At C-si/tio2mentioning

confidence: 71%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The proposed architecture FTO/TiO2/c-Si/i-a-Si:H/Cu2O/back contact studied through simulation demonstrates a power conversion efficiency of 20.03%. This study is the first to report detailed exploration of effect of the conduction band density of states on the efficiency of Si solar cell. Through optimization, the conduction band density of state (1017 cm-3) drastically increases the power conversion efficiency from 18% (at 1021 cm-3) to 21.25% (at 1017 cm-3) i.e., an improvement of 18% relatively. Along with this, the parameters like absorber layer thickness, absorber’s defect density, thickness of electron transport layer and interface defect density are also optimized. Moreover, the charge transport properties and the impact of the Schottky barrier height at c-Si/TiO2 interface on band alignment is studied. After optimization of various physical parameters such as thickness (100 μm), conduction band density of states (1017 cm-3) and defect concentration (1010 cm−3) of c-Si layer, thickness of TiO2 layer (20 nm) and interface defect density at c-Si/TiO2 junction (1010 cm−2), a short-circuit current of 38.11 mA cm−2, open-circuit voltage of 0.84 V, fill factor of 85.99% is obtained, leading to an enhanced theoretical power conversion efficiency of 27.77%.

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Section: Influence Of Interface States At C-si/tio2mentioning

confidence: 71%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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“…Later, it was discovered that the primary cause of the J-V hysteresis issue is the hole-transporting material, which can be fixed by using PEDOT:PSS or other inorganic hole-carrying materials with a lower capacitance for spiro-OMeTAD. 45 However, the applied voltage and scan rate also affect the hysteresis behaviour. This issue can be fixed by adding a thin buffer layer to the planar n-i-p arrangement.…”

Section: Perovskite Solar Cellsmentioning

confidence: 99%

The dawn of MXene duo: revolutionizing perovskite solar cells with MXenes through computational and experimental methods

Marimuthu,

Prabhakaran Shyma,

Sathyanarayanan

et al. 2024

Nanoscale

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Plasma-assisted carbon nanotube for solar cell application

Singh,

Sharma,

Sharma

2024

J Comput Electron

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Numerical simulation and optimization of a silicon clathrate-based solar cell n-Si136/p-Si2 using SCAPS-1D program

Cited by 19 publications

References 45 publications

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

The dawn of MXene duo: revolutionizing perovskite solar cells with MXenes through computational and experimental methods

Plasma-assisted carbon nanotube for solar cell application

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Numerical simulation and optimization of a silicon clathrate-based solar cell n-Si136/p-Si2 using SCAPS-1D program

Cited by 19 publications

References 45 publications

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

The dawn of MXene duo: revolutionizing perovskite solar cells with MXenes through computational and experimental methods

Plasma-assisted carbon nanotube for solar cell application

Contact Info

Product

Resources

About

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell