OFETs Electric Characteristics with Different Organic Materials for Low-Power Flexible Electronics Design

Abstract

Over the past decades, organic electronics have attracted wide research attention in transistors. One of the devices is organic field effect transistors (OFET), which brought a great revolution for their excellent mechanical flexibility, lightweight, low-temperature deposition, low manufacturing cost and conformable large coverage area, in contrast to conventional silicon-based transistors. This paper highlights the overview of OFET structure, operation and electrical parameters that affect the performance. The influence of gate dielectric thickness, electrode width and channel length on the behavior of transistors in terms of threshold voltage, current ratio and saturation mobility value has also been discussed. The progress in the development of organic semiconductor materials is also outlined, which helps to resolve the power consumption issue.