Off stoichiometry determination in cadmium telluride crystals

Bissoli, F.; Zappettini, A.; Zha, M.; Zanotti, L.; Paorici, C.

doi:10.1016/j.jallcom.2003.06.009

Cited by 14 publications

(14 citation statements)

References 13 publications

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“…This precision compares well with that reported by Bissoli et al, 7 who used the vapor phase optical absorption technique to determine the concentration of the second phase in (CdTe ϩ Cd) and (CdTe ϩ Te) samples.…”

Section: Discussionsupporting

confidence: 89%

Traveling heater method preparation and composition analysis of CdTe ingots

Audet¹,

Guskov

Greenberg

2005

Journal of Elec Materi

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Large polycrystalline CdTe charges for the subsequent growth of CdTe and CdZnTe crystals were prepared by the traveling heater method (THM). The composition of the produced material was evaluated by vapor pressure scanning (VPS) analysis. Results from these analyses were instrumental in improving the THM CdTe compounding process. The optimization of THM process parameters, such as the compounding rate and the loading configuration of the synthesis crucible, led to the preparation of polycrystalline CdTe ingots with small deviation from stoichiometry. For five out of six analyzed samples, tellurium content between 50.0012 and 50.0043 at. pct was achieved, which is well below the tellurium saturation limit of the single-phase solid in equilibrium with the molten zone at the chosen THM process temperature.

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Section: Discussionsupporting

confidence: 89%

Traveling heater method preparation and composition analysis of CdTe ingots

Audet¹,

Guskov

Greenberg

2005

Journal of Elec Materi

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“…They can be produced at low price with good efficiency and excellent stability. CdS/CdTe-based solar cells have demonstrated a high potential in photovoltaics with laboratory cell efficiencies exceeding 16% [6][7][8][9][10]. Moreover, the optical properties are closely related to the structure of the films and study of the optical properties gives valuable information about the latter properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

Shaaban

Afify

El-Taher

2009

Journal of Alloys and Compounds

158

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“…The stoichiometry of the samples was determined by an accurate analysis of the temperature dependence of the Cd and Te 2 vapors in equilibrium with the solid sample [7].…”

Section: Methodsmentioning

confidence: 99%

Stoichiometry related defects in CdTe crystals

Bissoli

Armani

Salviati

et al. 2004

phys. stat. sol. (c)

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In this work, we report on the structural analyses of undoped CdTe samples grown by the vapor phase and the Bridgman methods. Different techniques were used for determining the structural defects: wet etching, high resolution X-ray diffraction, double crystal X-ray topography and monochromatic SEMcathodoluminescence mapping. The density and the nature of the structural defects were found to be correlated to the stoichiometry of the samples, as determined by a detailed analysis of the temperature dependence of the partial pressure of the vapors in equilibrium with the solid. 1 Introduction CdTe crystals are employed for X-rays detection and as substrates for epitaxy, especially for the preparation of HgCdTe hetero-structures. In the former case, defects can act as recombination centers, limiting the charge collection efficiency. In the latter case, high structural perfection is required, as defects usually propagate from the substrate to the epi-layers, severely limiting the performance of the final device. For this reason, great efforts were done in the scientific community in order to reduce the defect density in CdTe crystals. In particular, Bridgman grown samples show a high density of dislocations and tellurium inclusions. Dislocations are easily formed in CdTe crystals due to the relatively low hardness of this compound. Tellurium precipitates are very common in CdTe crystals for different reasons. At first, the evaporation of a stoichiometric CdTe charge is strongly incongruent close to the melting point [1]. In fact, the vapor that fills the free volume of the ampoule in equilibrium with stoichiometric CdTe melt is almost made by atomic Cadmium. Moreover, at the congruent melting point, the solid CdTe results to be Te-deviated [1,2]. The inclusion density can be reduced by controlling the Cd vapor pressure during the growth by means of a Cd reservoir [3]. In alternative the growth chamber can be pressurized by inert gas, as for High Pressure Bridgman Growth. Recently, we have shown that good quality CdTe crystals can be obtained also by the Boron Oxide encapsulated Bridgman method [4].In this work, the influence of the stoichiometry on the structural properties of the crystals grown with this method are examined and compared with the properties of vapor phase grown (PVT) crystals.

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Off stoichiometry determination in cadmium telluride crystals

Cited by 14 publications

References 13 publications

Traveling heater method preparation and composition analysis of CdTe ingots

Traveling heater method preparation and composition analysis of CdTe ingots

Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

Stoichiometry related defects in CdTe crystals

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