On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy

Tuneable quantised conductance memory states in TiO2 based resistive switching devices in crossbar geometry for high density memory applications

“…During the reset process, redox reaction takes place at opposite electrode leading to rupture of the previously formed CF resulting in HRS. The RS mechanism discussed above is commonly known as electrochemical metallization (ECM) scheme, where the set and reset phenomenon in crossbar Cu/TiO 2 /Pt RS devices are driven by electrochemical redox reactions [6,21]. The conduction in HRS state in ECM type RRAM device is known to follow the tunnelling mechanism at high voltage and hopping mediated ionic conduction in low voltage regime [6,21].…”

“…The RS mechanism discussed above is commonly known as electrochemical metallization (ECM) scheme, where the set and reset phenomenon in crossbar Cu/TiO 2 /Pt RS devices are driven by electrochemical redox reactions [6,21]. The conduction in HRS state in ECM type RRAM device is known to follow the tunnelling mechanism at high voltage and hopping mediated ionic conduction in low voltage regime [6,21]. As depicted in figure 3(a), the slope of ∼1 in the low voltage regime of the linear fit of lnI versus lnV curves of HRS state for both set and rese processes, support the proposed hopping mediated ionic conduction in HRS of Cu/TiO 2 /Pt RRAM devices.…”

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

“…[14][15][16] Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,[17][18][19][20][21][22][23][24][25][26][27] Strontium titanate (SrTiO 3 , STO) is an inorganic lead-free perovskite material, which possesses the benefits of non-toxic nature, wide bandgap, and high thermal stability. [28][29][30] Thus, it has been widely employed in solar cells, capacitors, and transistors.…”