On the Charge Sheet Superjunction (CSSJ) MOSFET

Srikanth, Sneha; Karmalkar, Shreepad

doi:10.1109/ted.2008.2006545

Cited by 15 publications

(12 citation statements)

References 18 publications

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“…The CSSJ theory is presented in comparison to that of SJ to highlight the advantages of the former. Most qualitative aspects presented here follow those reported in [3], [5] considering a Si device. However, the quantitative results are significantly different since the impact ionization and mobility parameters of SiC differ vastly from those of Si.…”

Section: Device Operationsupporting

confidence: 77%

“…However, the quantitative results are significantly different since the impact ionization and mobility parameters of SiC differ vastly from those of Si. Moreover, the RONSP formulae given below include the n-pillar depletion width, Wd, under zero-bias, denoted Wd0, which was ignored in prior works [3], [5].…”

Section: Device Operationmentioning

confidence: 99%

“…Based on qualitative physics and numerical simulation, we showed that the RONSP of the CSSJ is even lower than that of a SJ by upto 50 %, for a given VBR. Our subsequent work [5] explained the evolution of the CSSJ and SJ structures from a simple Γ-shaped p+-n junction, and also, the practicability of the CSSJ concept.…”

Section: Introductionmentioning

confidence: 99%

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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Akshay

Karmalkar

2020

IEEE J. Electron Devices Soc.

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We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g. Al2O3 / SiO2; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ's p-pillar fabrication. Second, it can lower the specific-on resistance, RONSP, below that of SJ by 5−45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, EC, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, VBR, model, which shows that the VBR sensitivity to charge imbalance due to inevitable process variations is inversely proportional to EC; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of EC differences, the SiC CSSJ inherits the advantage of upto 15% higher VBR compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower RONSP than the SJ, at a specified VBR in 1-10 kV range and charge imbalance  20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC.

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Section: Device Operationsupporting

confidence: 77%

Section: Device Operationmentioning

confidence: 99%

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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Akshay

Karmalkar

2020

IEEE J. Electron Devices Soc.

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“…In the structure which the equipotential lines have been distributed uniformly in the structure, the electric field increases equally in the entire structure. Increased spread of the equipotential lines implies a reduced electric field, which translates to a higher V BR [18,19].…”

Section: Analysis Of the Structure In Off-statementioning

confidence: 99%

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Orouji

Jozi

Fathipour

2015

Materials Science in Semiconductor Processing

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“…2 (being d the depletion width and l the extension of the depletion) [8]. (2) The snapshots presented in Figs.…”

Section: Figmentioning

confidence: 99%

Capacitive behaviour in Super Junction trench MOSFET devices

Villamor

Cortés

Flores

et al. 2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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Abstract-This paper exploits for the first time the capacitive behaviour of Super Junction (SJ) Trench Power MOSFETs as a characterization method to determine their Charge Balance (CB). Differently from blocking voltage methods, the capacitive method allows the CB extraction in 800 V SJ devices by using low voltage systems (<30 V) to extract the drain-source capacitance (C ds ) in function of the drain-source voltage (V ds ). Hence, the device-under-test is never stressed in avalanche, avoiding device degradation and/or destruction. The correlation between the minimum C ds value at 25 V and the optimum CB is demonstrated by TCAD simulations and measurements. As a result, the highest breakdown voltage (V bd ), corresponding to the optimum CB, is determined by measuring C ds at 25 V. Moreover, the maximum V ds pinch voltage (V pinch ) exhibits a maximum value when C ds at 25 V is minimum, thus also being an interesting parameter to monitor.

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On the Charge Sheet Superjunction (CSSJ) MOSFET

Cited by 15 publications

References 18 publications

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Capacitive behaviour in Super Junction trench MOSFET devices

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