2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)
DOI: 10.1109/commad.2002.1237264
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On the InP/InGaAs double heterojunction bipolar transistor (DHBT) with emitter tunneling barrier and composite collector structure

J.Y. Chen
1
,
Kun-Wei Lin2,
C.Y. Chen3
et al.
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