On the interfacial thermal properties of two rough surfaces in contact in preimpregnated composites consolidation

Saoudi, Abdenour; León, Angel; Grégoire, Guillaume; Barasinski, Anaïs; Djebaili, Hamid; Chinesta, Francisco

doi:10.1088/2051-672x/aa9667

Cited by 9 publications

(5 citation statements)

References 19 publications

(23 reference statements)

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“…7a, b, we find that the gaps are equal between rough-rough and rough-smooth assemblies for different chemical vapor potentials (Uv), which proves the geometric validity of the Greenwood and Williamson technique. However, according to the work of Saoudi et al [20], the validity of this technique does not resist a thermal problem, because for the self-affine geometry, the roughness makes this assumption less and less valid. In the opposite limit, using this technique on flat surfaces may be acceptable.…”

Section: Rough-rough To Rough-smooth Contactmentioning

confidence: 99%

Numerical Modeling of Thin-Film Growth by Random Deposition with Particle Evaporation

Saoudi¹,

Boulahrouz²,

Fares³

et al. 2022

J. Nano- Electron. Phys.

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In the present work, we provide a generalization of particle deposition to enhance the physics of the simulation process and make it more similar to real deposition processes, such as particle evaporation, which is tuned to attract vapor and gaseous particles by reducing air pressure and crowding of other air molecules. This not only reduces the energy required for evaporation but also allows for a more direct path to the area of deposition, as the vapor particles are not as frequently redirected by other particles within the chamber. Although we do not deal with bombardment in our approach, we provide a method to generate clusters of random shape and size, ranging from a single particle to a collection of particles, in order to make the simulation more representative of experimental reality. According to the results obtained from our study, interface growth in random vapor deposition follows two distinct regimes (the first clusters are grown randomly by building an interface which has grown as a result of deposition or evaporation of particles due to the difference between the average chemical vapor potential Uv and interface Ui). Growth () and roughness () exponents were stable with increasing substrate size (L) and a number of bombarded particles (N). These exponents are sensitive to the variation of Ui, where  decreases as Ui changes from 0 to − 6 inversely to the exponent . All the surfaces obtained by this model have fractal properties. In addition, the technique of Greenwood and Williamson which consists in replacing the rough-rough contact by a rough-smooth contact is geometrically valid at the level of the interstices and less valid with respect to a thermal problem according to the roughness of interfaces of the surfaces in contact.

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Section: Rough-rough To Rough-smooth Contactmentioning

confidence: 99%

Numerical Modeling of Thin-Film Growth by Random Deposition with Particle Evaporation

Saoudi¹,

Boulahrouz²,

Fares³

et al. 2022

J. Nano- Electron. Phys.

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“…Another usual procedure consists of studying surface correlations [Saoudi et al, 2017;Mirabella and Aldao, 2016], with the height correlation function calculated from…”

Section: Surface Descriptors and Scaling Exponentsmentioning

confidence: 99%

Kinetic Monte Carlo simulation of random deposition and scaling behavior with respect to the germination length

Saoudi

Aissani

Sorba

et al. 2020

Int. J. Comp. Mat. Sci. Eng.

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This work aims at analyzing the scaling behavior and develop correlations during surface growing for different germination lengths. The surface growing by random deposition is simulated using a kinetic Monte Carlo approach, by considering different germination lengths. Different surface descriptors are extracted, among them the roughness and the correlation. The former allows extracting the scaling behavior, while the latter proves the existence of correlations independent of the system size but dependent on the germination length. Moreover, as in the case of random deposition with a null germination length, the growing roughness never saturates.

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“…Modelling conduction at rough interfaces under compression has attracted extensive and increasing interests since contact models by Greenwood et al [13,14], followed by models [4,[15][16][17] with assumed surface roughness statistics and elastoplastic behaviour of individual asperities. Recent years also witnessed advances in understanding contact and conduction behaviour at rough interfaces with the development of novel numerical tools, such as studies on electrical conduction by finite element methods (FEM) [18], contact stiffness by boundary element method (BEM) [19], adhesion by molecular dynamics (MD) [20], thermal conduction by FEM [21,22]. However, scale-dependent electrical properties and multi-physic phenomena at interfaces bring numerical challenges in efficiently and precisely simulating electrical contact resistance at rough interfaces.…”

Section: Introductionmentioning

confidence: 99%

Stress-dependent electrical impedance behaviours at fractal rough interfaces

Wang¹,

Zhai²,

Gan³

2021

Surf. Topogr.: Metrol. Prop.

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This work investigates interfacial electro-mechanical properties, including electrical contact resistance, interfacial capacitance and characteristic frequency of contacts formed with various surface structures. Fractal rough surfaces were generated and characterised by fractal dimension and root-mean-square (RMS) roughness. The rough surface with a thin oxide layer was compressed by the rigid flat to form a capacitor. Electrical impedances of this contact capacitor were simulated using the finite element method across a wide range of frequencies. A power-law relationship was found between the electrical contact resistance and applied compression load. An analytical model is proposed to capture the interfacial capacitance behaviour with increasing contact loads, revealing a transition of predominated modes for the capacitance. Higher fractal dimension yields smaller overall capacitance in the gap dominant and transition zones. The dependence of the characteristic frequency on compression was found to follow a power-law function at the low load range. It is found that the exponent and magnitude of obtained power-law relations show strong correlations to the fractal dimension and RMS roughness, respectively. Results of this work provide insights into developing a potential impedance measurement protocol to determine the thickness of the oxide layer on conductive fractal rough surfaces.

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On the interfacial thermal properties of two rough surfaces in contact in preimpregnated composites consolidation

Cited by 9 publications

References 19 publications

Numerical Modeling of Thin-Film Growth by Random Deposition with Particle Evaporation

Numerical Modeling of Thin-Film Growth by Random Deposition with Particle Evaporation

Kinetic Monte Carlo simulation of random deposition and scaling behavior with respect to the germination length

Stress-dependent electrical impedance behaviours at fractal rough interfaces

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