MSF
 1998
DOI: 10.4028/www.scientific.net/msf.264-268.981
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On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium

Mahdad Sadeghi
1
,
B. Liss2,
Einar Ö. Sveinbjörnsson
3
et al.
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