On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

Kuroda, Rihito; Teramoto, Akinobu; Li, X.; Suwa, Tomoyuki; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.7567/ssdm.2011.e-3-3

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 2011

DOI: 10.7567/ssdm.2011.e-3-3

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On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

Rihito Kuroda

Akinobu Teramoto

X. Li

et al.

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On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

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