CrystEngComm
 2022
DOI: 10.1039/d2ce00547f
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On the way to modelling dopant valence in ionic crystal growth: the Ti:Al2O3 case

Lingling Xuan,
Thierry Duffar

Abstract: and kann obtained from numerical simulations of Ti:sapphire annealing experiments (left) and their applications during crystal growth (right).

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