Symposium 1993 on VLSI Technology 1993
DOI: 10.1109/vlsit.1993.760257
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ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory Devices

Naohito Yamaguchi
1
,
Sakagami Sakagami2,
Arai Arai3
et al.
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Cited by 10 publications
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A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications

Shum
1
,
Tseng
2
,
Paulson
3
et al. 1995
IEEE Trans. Electron Devices
6
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1
0
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A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications

Shum
1
,
Tseng
2
,
Paulson
3
et al. 1995
IEEE Trans. Electron Devices
6
0
1
0
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Optimization of threshold voltage nonvolatile flash memory using Taguchi method

Aziz
1
,
Hissam
2
2012
2012 International Conference on Computer, Information and Telecommunication Systems (CITS)
2
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0
0
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HfO<inf>2</inf> inter-poly dielectric characteristics with interface fluorine passivation

Chen
1
,
Hsieh
2
,
Lu
3
et al. 2009
2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
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