Operation of class DE amplifier outside optimum condition

Sekiya, Hiroo; Negishi, Takayo; Suetsugu, Tadashi; Yahagi, Takashi

doi:10.1109/iscas.2006.1692567

Cited by 16 publications

(13 citation statements)

References 12 publications

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“…This result is one of the most important results in this paper. Class DE inverter with resonant filter never achieves class E switching outside the nominal state [5]. The ZVS in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…The output voltage of class DE inverter is quite sensitive to the variations of operating frequency. In [3] and [5], it was clarified that the output voltage changes from 68% to 160% of output voltage for the nominal state by ± 5% variations of operating frequency. Here, in this paper, we define "nominal state" as the operating state where class E switching conditions are satisfied as shown in Fig.…”

Section: Sensitivity To the Operating Frequencymentioning

confidence: 99%

“…2. Moreover, class DE inverter cannot achieve not only class E switching conditions but also zero voltage switching (ZVS) against the variations of operating frequency since class E switching conditions are very strict [5]. High sensitivity of the output voltage makes the frequency control of the output power be difficult.…”

Section: Sensitivity To the Operating Frequencymentioning

confidence: 99%

“…Therefore, we use only (8) and (9) for class E switching conditions. In these equations, we have 7 algebraic equations and 5 unknown initial values, namely, 5 . Therefore, 2 parameters can be set as the design parameters from 10 parameters.…”

Section: Conditions For the Designmentioning

confidence: 99%

“…Therefore, the output voltage is quite sensitive to operating frequency. Moreover, class E switching conditions are strict, so not only the class E switching conditions but also zero voltage switching (ZVS) cannot be achieved against the variations of operating frequency [3], [5]. It is recognized that the high sensitivity of the output power and the non-ZVS operation to the variations of the operating frequency are important problems for class DE inverter.…”

Section: Introductionmentioning

confidence: 99%

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Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Katayama¹,

Häse²,

Sekiya³

et al. 2007

IEICE Transactions on Fundamentals of Electronics, Communicatio

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In this paper, class DE inverter with second order constant K band-pass filter is proposed. In the proposed inverter, the band-pass filter is used instead of the resonant filter in class DE inverter presented at the previous papers. By using band-pass filter, two important results can be gotten. One is the sensitivity of the output voltage to the operating frequency is suppressed by using band-pass filter. The other is that zero voltage switching operation appears when the operating frequency is lower than the nominal frequency. Moreover, it keeps the advantage of class DE inverter with resonant filter, that is, high power conversion efficiency under high frequency operation because of class E switching. The laboratory experiments achieve 90.4% power conversion efficiency under 1.98 W output power and 1.0 MHz operation.

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“…This result is one of the most important results in this paper. Class DE inverter with resonant filter never achieves class E switching outside the nominal state [5]. The ZVS in Fig.…”

Section: Resultsmentioning

confidence: 97%

Section: Sensitivity To the Operating Frequencymentioning

confidence: 99%

Section: Sensitivity To the Operating Frequencymentioning

confidence: 99%

Section: Conditions For the Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Katayama¹,

Häse²,

Sekiya³

et al. 2007

IEICE Transactions on Fundamentals of Electronics, Communicatio

Self Cite

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Implementation of class‐E/F₃ power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity

Abdipour

Hayati

Grebennikov³

2022

Circuit Theory & Apps

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Summary In this paper, a theoretical analysis of the class‐E/F3 power amplifier based on the variation of the grading coefficient m1 and its vital role in MOSFET selectivity to operate safely under given design specifications is presented while the nonlinearity of the drain‐to‐source capacitance is considered. Moreover, the importance of Vbi and Cjo in designing the class‐E/F3 amplifier is investigated. To clarify how the grading coefficient m1 and the other mentioned parameters can directly influence the power amplifier performance and also its elements, these MOSFET parameters are considered as the independent variables of the calculated equations and consequently define the horizontal axis of the obtained plots. Accordingly, as the grading coefficient increases, the maximum switch voltage increases and values of the output power and output power capability decline. Moreover, to prove the reliability of the carried‐out analysis in selecting proper MOSFETs, the performances of three amplifier samples utilizing IRF510, IRFZ24N, and 2SK2504 MOSFETs with different grading coefficient m1 and almost similar Vbi and Cjo are studied. Then, by comparing the results of amplifiers with three MOSFETs, IRF510, IRF530, and IRF540, with similar grading coefficient and different values of Vbi and Cjo, the significance of considering the values of Vbi and Cjo is investigated. Eventually, three amplifiers with 2SK2504, IRF510, and IRF530 MOSFETs have been simulated, implemented, and tested and measurement results agreed well with the theoretical and simulation results.

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Effect of gate‐to‐drain and drain‐to‐source parasitic capacitances of MOSFET on the performance of Class‐E/F ₃ power amplifier

Sheikhi

Hayati

Grebennikov

2016

IET Circuits, Devices & Systems

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In this study, the Class-E/F 3 power amplifier with linear gate-to-drain and nonlinear drain-to-source capacitance is proposed. The analysis for the effect of the parasitic capacitance in the mixed mode Class-E/F 3 with square and sinusoidal gate-to-source voltage has been done. Most of the design equations in this study do not have analytical solutions, and the numerical analyses are used. As can be seen, there is little difference between the results related to the sinusoidal and square gate-to-source voltage. So, only the simulation and experimental result for Class E/F 3 with square gate-to-source voltage at operating frequency of 4 MHz has been done. The results in this study indicate that it is important to consider the effect of the MOSFET gate-to-drain capacitance for achieving the ZVS/ZDS conditions in the Class-E/F 3 power amplifier. The PSpice simulation and measured results are agreed with the analytical expressions, which show the validity of the presented analytical expressions. Finally, the waveforms of Class E/F 3 are compared with equivalent waveforms of Class-E power amplifier, in order to indicate its advantages.

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Operation of class DE amplifier outside optimum condition

Cited by 16 publications

References 12 publications

Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Implementation of class‐E/F₃ power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity

Effect of gate‐to‐drain and drain‐to‐source parasitic capacitances of MOSFET on the performance of Class‐E/F ₃ power amplifier

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Operation of class DE amplifier outside optimum condition

Cited by 16 publications

References 12 publications

Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Design of Class DE Inverter with Second Order Constant K Band-Pass Filter

Implementation of class‐E/F3 power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity

Effect of gate‐to‐drain and drain‐to‐source parasitic capacitances of MOSFET on the performance of Class‐E/F 3 power amplifier

Contact Info

Product

Resources

About

Implementation of class‐E/F₃ power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity

Effect of gate‐to‐drain and drain‐to‐source parasitic capacitances of MOSFET on the performance of Class‐E/F ₃ power amplifier