Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs

A new simple method to reveal deep levels in photosensitive crystals is proposed and demonstrated using a group of samples of SI GaAs. The method is based on ac photoconductivity measurements during linear change of temperature, when the quasi‐Fermi level crosses the impurity and defect levels present in the band gap. More than 10 maxima are observed in the temperature region 6 to 300 K for λexc = 1.03 μm. Results obtained with samples of different producers document the diagnostic potential of this method. Background theory is presented together with numerical simulation to demonstrate its basic features. Dependence of the results on excitation density, applied potential, heating rate, chopping frequency, and excitation photon energy is checked and discussed together with a comparison with transient spectroscopies and TSC method.

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Thermostimulated Photoconductivity Method. Application to GaAs

Pastrňák

Karel

Petříček

1991

Phys. Stat. Sol. (a)

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Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching

Sarkar

Mazumder

2007

IEEE Trans. Electron Devices

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Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 155 µm

et al. 2010

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We experimentally study the thickness dependence of the terahertz (THz) response in {110}-oriented GaAs crystals for free space electro-optic sampling at 1.55 microm. The THz response bandwidths are analyzed and simulated under phase-matching condition with a model frequency response function. The results indicate that the detection bandwidth increases from 2 THz to 3 THz when the thickness of GaAs is reduced from 2 mm to 1 mm. Below 1 mm, the detected bandwidth is increasingly limited by the emitter characteristics and the finite probe pulse duration. The broadest bandwidth in experiment reaches 3.3 THz when using a 0.2 mm thick crystal, while it exceeds 5 THz in theory. The THz response sensitivity was studied experimentally and modeled taking into account the absorption of the THz radiation in the GaAs crystal. While absorption was found to be negligible for the crystal thickness range studied here, strong saturation is predicted theoretically for crystal thicknesses exceeding 5 mm.

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Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs

Cited by 3 publications

References 12 publications

Thermostimulated Photoconductivity Method. Application to GaAs

Thermostimulated Photoconductivity Method. Application to GaAs

Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching

Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 155 µm

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