Optical Absorption Enhancement in Slanted Micro-Hole C-Si for Photovoltaic Applications

Adib, Mosaddek Hossain; Mullick, Tahsin Uddin; Khalil, Md. Ibrahim; Chowdhury, Arshad; Chang, Gee‐Kung; Amin, Nowshad

doi:10.1364/acpc.2012.ath2f.3

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…Nanoholes, which are cylindrical negative nanostructures that have a pore-like nature, have shown through simulations that they provide superior geometrical confinement of incident photons and enhance electron-photon coupling into the underlying substrate material compared to free-standing positive nanostructures. [36][37][38] However, the realization of (Al)GaN nanohole arrays with precise control over the holes' size, distribution, and vertical profile is yet technically challenging, leading to limited studies and development efforts of the (Al)GaN nanoholes. [39][40][41] This study shows the fabrication and performance analysis of MSM UV PDs with and without periodic nanohole array patterns on AlGaN/GaN HEMT structure grown with a double GaN/AlN superlattice (SL) buffer stack.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.

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Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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“…In recent years, there are many studies about the optical properties of various of nanostructures, such as nanowire (Garnett and Yang 2008, Garnett and Yang 2010, Cao et al 2010, Wu et al 2017, Xu et al 2017, Wang et al, 2017a, nanocone (Xu et al 2016), nano-hemisphere (Kang and Fang 2014), truncated nanocone (Kim et al 2018), pyramid (Tan et al 2017), motheye (Makableh et al 2018), nanohole (Han and Chen 2010, Peng et al 2010, Adib et al 2012, Chen et al 2014, Hong et al 2014, Wang et al 2017a, 2017b, Deng et al 2018, Fu et al 2018, and nano-conehole (Du et al 2011). The main materials of those nanostructures are silicon, silicon nitride, silicon carbide, gallium arsenide, or gallium nitride.…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of light trapping GaN nanohole and nanorod arrays for UV detectors

Zhangyang

Liu

et al. 2020

J Nanopart Res

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In this paper, based on the excellent light trapping performance of the nanostructure, the structure of the electron emission layer of the ultraviolet detector is optimized. In this paper, simulation models of gallium nitride (GaN) nanohole arrays and nanorod arrays are designed by COMSOL Multiphysics software, which is based on the finite element method (FEM). In order to optimize the geometric parameters of GaN nanohole and nanorod arrays, and understand the influence of polarized light on them, the light absorption performance in the ultraviolet (UV) band has been fully analyzed. We found that when the lattice constant ranges from 200 to 500 nm, the GaN nanohole array and the GaN nanorod array have extreme absorptivity. And when the incident light has an inclination of 20°, the light trapping performance of the nanohole array can be further improved. GaN nanostructures with high light trapping capabilities will help improve the photoelectric emission efficiency of GaN photocathode and provide design reference for UV detectors with excellent performance.

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Optical Absorption Enhancement in Slanted Micro-Hole C-Si for Photovoltaic Applications

Cited by 2 publications

References 2 publications

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Comparative analysis of light trapping GaN nanohole and nanorod arrays for UV detectors

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