Optical absorption studies on AgInSe2 and AgInTe2 thin films

El‐Korashy, A.; Abdel-Rahim, M.A.; El-Zahed, H.

doi:10.1016/s0040-6090(98)00982-1

Cited by 60 publications

(29 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Furthermore, for x = 0 they find for the main energy gap E g = 1.278 eV, which is far from the value determined in this work and also far from the energy gap usually reported of AIS. [9][10][11]38,37 It is also interesting to note that in the case of thin films, values of the energy gaps have been reported for the composition p-Ag 0.5 Cu 0.5 InSe 2 . The values have been determined using optical absorption and are in good agreement with our results of Table II, for 0.4Ͻ x Ͻ 0.6.…”

Section: -3mentioning

confidence: 93%

“…This system is located between the ternary semiconducting chalcopyrite compounds CuInSe 2 ͑CIS͒ [3][4][5][6][7][8] and AgInSe 2 ͑AIS͒. [9][10][11] Both compounds have a high optical absorption coefficient, which is an important factor for the manufacture of devices, direct energy gap with values E g Ϸ 1.00 and 1.22 eV respectively, and belong to the space group I42d. The CIS can be obtained with p-or n-type conductivity, whereas the AIS is obtained mainly with n-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties and electronic structure of polycrystalline Ag1−xCuxInSe2 alloys

Albornóz

Serna

León

2005

Journal of Applied Physics

View full text Add to dashboard Cite

The dielectric function ͑͒ of polycrystalline bulk samples of the quaternary chalcopyrite semiconductors Ag 1−x Cu x InSe 2 with x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0 has been determined by spectroscopic ellipsometry in the energy range from 0.5 to 4.7 eV at room temperature. Accurate values of refractive indices n and extinction coefficients k representative of bulk materials are obtained from the data. The value of the main energy gap is very sensitive to the composition and varies from 1.225 to 1.009 eV as x increases ͑Cu content͒. The structures observed in ͑͒ have been analyzed by fitting the numerically differentiated experimental spectrum ͑second derivative͒ to analytical line shapes. As a result, the energies corresponding to different electronic transitions have been determined as a function of the composition, and they have been identified within the electronic band structure of chalcopyrites.

show abstract

Section: -3mentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Optical properties and electronic structure of polycrystalline Ag1−xCuxInSe2 alloys

Albornóz

Serna

León

2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…В роботах [10,11] проводились дослідження фотопровідності AgInSe 2 , було показано наявність хороших фотодіодних характеристик. Оптичні функції і спектри фотолюмінесценції AgInSe 2 були отримані в [12,13], а також розрахована методом емпіричного псевдопотенціалу зонна структура. Наявність двопроменезаломлення і ізотропної точки в таких з'єднаннях дозволяє використовувати їх в якості фільтрів [14,15], а також для подвоєння частоти [16].…”

unclassified

Electric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6

Замуруєва

Khvyshchu

Parasyuk

et al. 2016

PCSS

View full text Add to dashboard Cite

Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag2In2SiSe6and Ag2In2GeSe6single crystals are high-resistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe2 - Si(Ge)Se2 when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag2In2SiSe6 and Ag2In2GeSe6 respectively.

show abstract

“…Today there is a great amount of data devoted to the production process of films and silver sulfide residues by both high temperature methods: thermal evaporation [2, 4,11,12], electro-deposition [5,13], molecular beam epitaxy (MBE) [14], gamma-irradiation [15], chemical deposition from vapour phase [16], sulfurization [17,18], and low temperature methods: SILAR method [19,20], chemical deposition [1,[21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Kinetic Aspects of Hydrochemical Deposition of Solid Phase Ag2S

2016

European Reviews of Chemical Research

View full text Add to dashboard Cite

The article considers kinetic aspects study of hydrochemical deposition of solid phase Ag2S from solutions containing silver nitrate, ammonium hydroxide and sodium citrate at temperatures 303-343 K in the conditions of the spontaneous formation of solid phase.The authors conclude that: 1. Particular kinetic orders are defined on all components of reaction mixture and activation energy of this process is 37 kJ/mole.2. In the certain concentration limits formal kinetic equation was derived for the rate of conversion of silver salt into silver sulfide that allows to provide the regulation of the rate of silver sulfide phase formation in the investigated reaction mixture purposefully.

show abstract

Optical absorption studies on AgInSe2 and AgInTe2 thin films

Cited by 60 publications

References 12 publications

Optical properties and electronic structure of polycrystalline Ag1−xCuxInSe2 alloys

Optical properties and electronic structure of polycrystalline Ag1−xCuxInSe2 alloys

Electric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6

Kinetic Aspects of Hydrochemical Deposition of Solid Phase Ag2S

Contact Info

Product

Resources

About