Optical and electrical characterization of thin film MSP heterojunction based on organic material Al/p-Si/P3HT/Ag

Meftah, S.E.; Benhaliliba, M.; Kaleli, Murat; Benouis, C.E.; Yavru, Celal Alp; Bayram, A.

doi:10.1016/j.physb.2020.412238

Cited by 26 publications

(8 citation statements)

References 31 publications

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“…The onset wavelength for the MEH-PPV thin film fabricated in chloroform was 611 nm, giving a value of 2.03 eV. The calculated value can be confirmed using the Beer–Lambert law as follows: 12 where d is the layer thickness and A is the absorption ratio value. The bandgap value was estimated from the fundamental absorption edge of the films.…”

Section: Resultssupporting

confidence: 52%

“…The bandgap value was estimated from the fundamental absorption edge of the films. For the linear plot of versus over a wide range of photon energies, the absorption coefficient can be expressed as 12 , 13 where is a constant, E g is the bandgap energy of the material, and takes the value for a direct transition, with the absorption plot showing a single slope. 14 Figure 5 shows the plot of versus .…”

Section: Resultsmentioning

confidence: 99%

“…The bandgap value was estimated from the fundamental absorption edge of the films. For the linear plot of aht versus ht over a wide range of photon energies, the absorption coefficient can be expressed as 12,13 aht…”

Section: Structural Analysismentioning

confidence: 99%

“…However, mostly n is higher than unity (n > 1) and is found to be 3.6, which may be due to the native oxide layer on electrodes 21 or other effects, such as the inhomogeneous thickness of the deposited film, the organic layer effect on the structure, etc. 12 It is observed that the rectification ratio (RR) of the MEH-PPV organic heterojunction is about 36.26. Cheung's functions, given in Eq.…”

Section: Current-voltage (I-v) Characteristics Of Al/ P-si/meh-ppv/ag Structurementioning

confidence: 99%

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Innovative Organic MEH-PPV Heterojunction Device Made by USP and PVD

Meftah

Benhaliliba

Kaleli

et al. 2021

Journal of Elec Materi

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An Al/p-Si/poly[2-methoxy-5-(2-ethylhexoxy)-p-phenylenevinylene] (MEH-PPV)/Ag organic heterojunction has been prepared using homemade ultrasonic spray pyrolysis (USP) equipment for deposition of the organic thin film and physical vapor deposition (PVD) for the metallic contacts. The organic layer produced on glass was analyzed by optical and morphological methods. The bandgap of the organic thin film was found to be $ 2.03 eV with a thickness of around 140 nm, using ultraviolet-visible (UV-Vis) and scanning electron microscopy (SEM) characterization, respectively. The amorphous nature of the MEH-PPV polymer was confirmed by its x-ray diffraction pattern. To determine the electrical parameters, the heterojunction based on MEH-PPV was characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark at room temperature. The ideality factor and barrier height of the organic heterojunction were found to be 3.6 eV and 0.56 eV to 0.59 eV, respectively, with an average series resistance of 94.39 X, based on the I-V characteristics. The barrier height was also calculated based on the capacitance-voltage measurements, yielding slightly different results due to the applied frequencies of 10 kHz (/ B ¼ 0:50) and 1 MHz ð/ B ¼ 0:74Þ, respectively.

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Section: Resultssupporting

confidence: 52%

Section: Resultsmentioning

confidence: 99%

Section: Structural Analysismentioning

confidence: 99%

Section: Current-voltage (I-v) Characteristics Of Al/ P-si/meh-ppv/ag Structurementioning

confidence: 99%

See 2 more Smart Citations

Innovative Organic MEH-PPV Heterojunction Device Made by USP and PVD

Meftah

Benhaliliba

Kaleli

et al. 2021

Journal of Elec Materi

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“…There has been rising amount of researchs to enhance the electrical properties of diodes by inserting organics (Erdal et al, 2021;Eroğlu et al, 2020;Meftah et al, 2020), metal oxides (Yenel et al, 2021) and nanocrystals materials (Kocyiğit et al, 2021;Koçyiğit et al, 2021;Yıldırım et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Avcı

Hussaini

Erdal

et al. 2021

Selçuk Üniversitesi Fen Fakültesi Fen Dergisi

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Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

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