Optical and electrical properties of Y2O3 thin films prepared by ion beam assisted deposition

Leng, Jinsong; Zhao, Yu; Li, Yuqiong; Zhang, Dongpu; Liao, X. D.; Xue, Wei

doi:10.1016/j.apsusc.2010.03.054

Cited by 25 publications

(11 citation statements)

References 23 publications

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“…In the electrical characteristics, Y 2 O 3 films deposited without ion beam bombardment have large relative dielectric constant, but the constant decreased with time rapidly, even over 40% [153]. With the increase of ion energy, the relative dielectric constant decreased and has less change with time and the electrical breakdown strength.…”

Section: Applications Of Ibad Techniquementioning

confidence: 98%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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Section: Applications Of Ibad Techniquementioning

confidence: 98%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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“…Y 2 O 3 thin films have been mainly deposited via physical vapor deposition (PVD) techniques including thermal oxidation, molecular beam epitaxy, electron beam evaporation, ion beam‐assisted deposition, pulsed laser deposition, and radio frequency sputtering . MOCVD is a promising technique for large‐scale fabrication of thin films owing to its distinct advantages over PVD techniques .…”

Section: Introductionmentioning

confidence: 99%

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Karle

Dang

Prenzel

et al. 2015

Chemical Vapor Deposition

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Thin films of Y 2 O 3 are deposited on Si(100) and Al 2 O 3 (0001) substrates via metal-organic (MO)CVD for the first time using two closely related yttrium tris-amidinate compounds as precursors in the presence of oxygen in the temperature range 400-700 8C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 8C and higher both the precursors yield polycrystalline Y 2 O 3 thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y 2 O 3 . The optical band gaps are estimated using UVVis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y 2 O 3 /p-Si/Ag. Leakage currents and dielectric constants are also determined.

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“…While ion bombardment energy is below 300 eV, n increases with the ion energy. For example, n of the sample prepared with 300 eV IBAD is 4.38 at 8 μm, 0.11 larger than sample deposited without ion-beam bombardment, and that's because the ion beam could lead to the collapse of pores in Ge film [15]. But with the continuous increase of ion energy, the refractive index begins to decrease, and that maybe because a high-energy ion beam could cause anti-sputtering disarrange Ge film structure, leading to more pores.…”

Section: Resultsmentioning

confidence: 98%

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition

Leng

Zhao

Ji³

et al. 2013

Appl. Opt.

Self Cite

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Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to shift toward a longer wavelength when the ion energy increases. 150 eV ion bombardment energy could help to reduce absorption in the infrared spectrum, elevating 2% of film transmittance. Diffraction intensity decreases with bombardment ion energy indicates that the crystallinity of Ge film is degenerated. Electrical property has been analyzed through Hall measurement. The resistivity of sample prepared with 300 eV ion energy drops substantially from 477 to 137 Ω cm, and it changes slowly with further increase of ion bombardment energy.

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Optical and electrical properties of Y2O3 thin films prepared by ion beam assisted deposition

Cited by 25 publications

References 23 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition

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Optical and electrical properties of Y2O3 thin films prepared by ion beam assisted deposition

Cited by 25 publications

References 23 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Metal‐organic CVD of Y2O3 Thin Films using Yttrium tris‐amidinates

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition

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Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium tris‐amidinates