Optical and Spectroscopic Techniques

Demtröder, Wolfgang; Svanberg, Sune

doi:10.1007/978-0-387-30420-5_13

Cited by 4 publications

(1 citation statement)

References 95 publications

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“…Interaction of short and ultra-short pulse laser irradiance with semiconductor resulting in light-induced transient absorption has been a subject of studies in pump-and probe experiments for many years -starting from introduction of saturable absorbers and, lately, extended to studies of energy transition into solids [1]. Study of transient absorption has been recently extended to quantum dots enriching our understanding of excitation-relaxation processes in different phases and conditions of matter.…”

Section: Introductionmentioning

confidence: 99%

Detector response to high repetition rate ultra-short laser pulses. I

Zakharova

Rafailov

2015

SPIE Proceedings

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Optical nonlinearities in semiconductors and semiconductor detectors have been widely investigated and exploited for many scientific and industrial applications. The correlation of optical and electronic characteristics in these detector materials under exposure of ultra-short laser pulses at high pulse repetition rates is still not very well known. These effects may be quite beneficial for many applications ranging from chemical and biological sensing to light-induced superconductivity. In this paper, we discuss the effect of extended bleaching in order to demonstrate sensing applications of such phenomenon as an example. Pump-probe measurements in bulk semiconductors will be presented to quantify the transient absorption dynamics and relate this to the electronic response of the detector devices. This effect is not limited semiconductors and may affect other matter states and electronic structures, like dielectrics.

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Section: Introductionmentioning

confidence: 99%

Detector response to high repetition rate ultra-short laser pulses. I

Zakharova

Rafailov

2015

SPIE Proceedings

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Gas in scattering media absorption spectroscopy on small and large scales: Toward the extension of lung spectroscopic monitoring to adults

Lin

Lundin

Svanberg

et al. 2021

Transl Biophotonics

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Numerous natural materials are porous, contain free gas and are scattering light strongly. Scattering brings about a strong trapping of light and an associated prolonged transit time for photons through a medium. In contrast to the matrix materials, gas enclosures require very narrowband laser radiation for probing. We have in the present study used the gas in scattering media absorption spectroscopy method to study free oxygen in thin (cm) samples utilizing a tunable diode laser, while a pulsed dye laser was employed in corresponding measurements on larger samples, up to the meter scale. Time‐resolved spectroscopy was in both cases used to assess the temporal distribution of the detected photons, mapping the path lengths through the media, which ranged between few centimeters up to 100 m. This study explores the feasibility to extend recent successful monitoring of gases in neonatal infant lungs to the case of larger children or even adults, which could have very important applications, for example, in ventilator setting optimization for severely ill patients, suffering, for example, from SARS‐CoV‐2. The conclusion of our work is that this goal most realistically can be reached by applying intratracheal laser light illumination at the 1 W power level, employing a tapered amplifier, injected with a distributed feedback diode‐laser oscillator output and combined with wavelength‐modulation spectroscopy.

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Ultrafast bandgap technique: light-induced semiconductor augmentation

Zakharova

Rafailov

2014

SPIE Proceedings

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Optical and Spectroscopic Techniques

Cited by 4 publications

References 95 publications

Detector response to high repetition rate ultra-short laser pulses. I

Detector response to high repetition rate ultra-short laser pulses. I

Gas in scattering media absorption spectroscopy on small and large scales: Toward the extension of lung spectroscopic monitoring to adults

Ultrafast bandgap technique: light-induced semiconductor augmentation

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