Optical characterization of HfO2 thin films grown by atomic layer deposition

Aarik, Jaan; Mändar, Hugo; Kirm, M.; Pung, L.

doi:10.1016/j.tsf.2004.01.110

Cited by 189 publications

(182 citation statements)

References 36 publications

Supporting

Mentioning

151

Contrasting

Unclassified

Order By: Relevance

“…3 shows excitation spectra, where the main feature is a notable excitation onset at w7.5 eV observed for all emissions. It is also in agreement with earlier results Aarik et al, 2005;Gorbunov et al, 2005). This onset is assigned to the beginning of intrinsic absorption of transition alumina.…”

Section: Resultssupporting

confidence: 93%

“…The number of occupied tetra-or octahedral sites varies for different polymorphs, which leads to remarkable differences in their properties. There are only a few experimental reports on intrinsic electronic properties obtained for d-Al 2 O 3 powder or for mixed amorphous-crystalline Al 2 O 3 films (Aarik et al, 2005). Luminescence properties of g-and d-Al 2 O 3 nanopowders have been evaluated in Gorbunov et al (2005) and nano-ceramics in Kortov et al (2008).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

VUV spectroscopy and electronic excitations in nano-size alumina

Kirm

Feldbach

Kotlov

et al. 2010

Radiation Measurements

Self Cite

View full text Add to dashboard Cite

a b s t r a c tLuminescence properties and electronic excitations of d-and Q-phases of Al 2 O 3 nano-powders, prepared by plasma processing technique, were studied using time-resolved luminescence spectroscopy under vacuum ultraviolet excitation. The fundamental absorption edge was found at 7.5 eV, which is 1.5 eV less than that of a-Al 2 O 3 in agreement with theoretical predictions for transition alumina. The broad-band emissions with maxima at 5.5 and 4.6 eV are assigned to radiative decay of the intrinsic excitations. Emission of transition metal impurities was found near 1.75 eV. The emission bands peaked at 3.1 and 2.6 eV are assigned to F þ and F centres, respectively.

show abstract

Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

VUV spectroscopy and electronic excitations in nano-size alumina

Kirm

Feldbach

Kotlov

et al. 2010

Radiation Measurements

Self Cite

View full text Add to dashboard Cite

show abstract

“…3. In pure monoclinic HfO 2 single crystals this band corresponds to radiation decay of STE [7,8,9]. The PL decay kinetics of UV emission in HfO 2 contains only slow components of ms-μs ranges.…”

Section: Soft X-ray Excitationmentioning

confidence: 97%

“…Moreover, hafnium oxide shows interesting physical and chemical properties. It is widely used in optical fields because of its high refractive index, high optical transparency in the ultraviolet-infrared spectral range, and wide optical band gap (E g = 5.8-6.2 eV) [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…In low-temperature photoluminescence (PL) spectra of HfO 2 crystals or films the emission band of defects can be detected in the region of 2.7-3.1 eV [13][14][15]. An UV intrinsic emission band of self-trapped excitons (STE) was observed in the region of 4.4 eV [7,8,9]. Pure HfO 2 , however, becomes crystalline at temperatures lower than 500° C. For high-k gate dielectrics, an amorphous structure is always preferred because a polycrystalline film can introduce high leakage paths along grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Пустоваров

Smirnova

Lebedev

et al. 2016

Journal of Luminescence

View full text Add to dashboard Cite

Cite this article as: V.A. Pustovarov, Т.P. Smirnova, M.S. Lebedev, V.A. Gritsenko and M. Kirm, Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation, Journal of Luminescence, http://dx.doi.org/10. 1016/j.jlumin.2015.10.053 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO 2 and Al 2 O 3 films, respectively.Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x= 4; 17; 20 at.%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and nsluminescence decay kinetics, as well as changes in the time-resolved luminescence and 2 luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed.

show abstract

Polymer‐Assisted Deposition of Al‐Doped HfO₂ Thin Film with Excellent Dielectric Properties

Park

Yang²,

Lee

et al. 2019

Adv Materials Inter

View full text Add to dashboard Cite

Demands for high‐k dielectric materials increase as transistors scale down. One of the promising high‐k dielectric materials is HfO2 owing to its large band gap, high dielectric constant, and excellent physical/chemical stability. Although several cost‐effective solution‐based deposition methods have been developed, their dielectric performances are inferior to those obtained by vacuum processes (e.g., atomic layer deposition, sputtering). This study demonstrates a solution‐based polymer‐assisted deposition (PAD) of high‐k Al‐doped HfO2 thin films exhibiting remarkable dielectric performances comparable to the conventional deposition methods. The PAD ensures the control of film thickness (≥3 nm) and the homogenous Al doping in the entire thin film. The key to the success is HCl‐mediated coordination of metal precursor and polymer. Thorough analysis on the structure and chemical composition of the dielectric layer is carried out. It is found that the phase transition from monoclinic phase to a mixture of tetragonal and amorphous phases results in excellent dielectric properties. The 7.8 nm thick thin film doped with 4.1 at% of Al exhibits a high dielectric constant of 30.2 with a high areal capacitance (674 nF cm−2 at 1.0 kHz), a low leakage current (3.3 × 10−9 A cm−2 at 2.0 MV cm−1), and a high breakdown voltage (7.7 V).

show abstract

Optical characterization of HfO2 thin films grown by atomic layer deposition

Cited by 189 publications

References 36 publications

VUV spectroscopy and electronic excitations in nano-size alumina

VUV spectroscopy and electronic excitations in nano-size alumina

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Polymer‐Assisted Deposition of Al‐Doped HfO₂ Thin Film with Excellent Dielectric Properties

Contact Info

Product

Resources

About

Optical characterization of HfO2 thin films grown by atomic layer deposition

Cited by 189 publications

References 36 publications

VUV spectroscopy and electronic excitations in nano-size alumina

VUV spectroscopy and electronic excitations in nano-size alumina

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Polymer‐Assisted Deposition of Al‐Doped HfO2 Thin Film with Excellent Dielectric Properties

Contact Info

Product

Resources

About

Polymer‐Assisted Deposition of Al‐Doped HfO₂ Thin Film with Excellent Dielectric Properties