Optical electronic microdisplacement gage

Abstract

Developed were a model, a design and software of a precision device for measuring microdisplacement values, which can be used during automated control of geometrical parameters of various microobjects, and in particular in microelectronics I. INTRODUCTION During manufacture of integrated circuits and complicated solid-state devices (LSI, VLSI, microwave transistors, power microelectronics devices with good prospects etc.) having specific dimensions of layout elements of less than 1 µm, including herein 0.5 -0.13 µm, it is necessary to measure the period, width, thickness, position and quality of their peripherals. LSI elements of submicron dimensions, as well as those of nanoelectronics devices, are generated in layers of different materials (metals, dielectrics, semiconductors) which have 0.05 -1 µm thickness and significantly differ regarding optical and emission properties [1]. Specific feature of such threedimensional profile of a transition area of different shape, and the knowledge of geometrical structure of the area is necessary for high precision linear measurement at submicron level. At present for controlling geometrical parameters of such microobjects SEM methods are typical, but they are expensive and mostly used for failure analysis, and their use during routine inspection in LSI and VLSI technology is inefficient. A substantial problem in submicron technology is assurance and control of planarity and parallelism of surfaces of semiconductor wafers of big diameters, and these purposes SEM methods are also inapplicable [2, 3].