Optical fiber for deep ultraviolet light

Oto, Masanori; Kikugawa, Shinya; Sarukura, Nobuhiko; Hirano, Masahiro; Hosono, Hideo

doi:10.1109/68.942666

Cited by 33 publications

(21 citation statements)

References 8 publications

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“…Ga 2 O 3 is a unique material that has reasonably good electrical conductivity and high transmittance down to very short wavelengths ∼257 nm [13,14]. We confirmed operation of TFTs using Ga 2 O 3 for channel [15] and expect that it will be used for photo-sensors by combining with DUV optical fibers [16,17]. This possibility will develop novel tools in chemical biology for detecting e.g.…”

Section: Recent Progress and Issues In Oxide-based Optoelectronic Devsupporting

confidence: 61%

Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

et al. 2006

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Recent progress in oxide-based transparent optoelectronic devices is reviewed. It is important to understand electronic structures inherent to oxides in order to develop new materials and to find suitable device applications that oxide materials can have distinct advantages over conventional semiconductors. Two new transparent oxide semiconductors, (i) p-type layered oxychalcogenides LaCuOCh (Ch = chalcogen), and (ii) large-mobility amorphous oxide semiconductors (AOSs), are taken as examples. Their peculiar properties are discussed in comparison with conventional semiconductors based on consideration of electronic structures. Two associated devices, an excitonic lightemitting diode using LaCuOCh and transparent flexible thin film transistors using AOSs, are also shown.

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Section: Recent Progress and Issues In Oxide-based Optoelectronic Devsupporting

confidence: 61%

Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

et al. 2006

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“…When commercially obtained fibers are used to propagate UV light, defects and color centers which will deteriorate the communication quality may be formed [1,2] . At the same time, defect formation in SiO 2 ∶GeO 2 glasses by illumination with UV radiation is now attracting much interest since it closely related to the photo induced refractive index(n) change leading to the formation of Bragg gratings [3,4] .…”

Section: Introductionmentioning

confidence: 99%

UV laser induced transmission change of pure and doped silica glass

Xie

Deng

Luo

et al. 2008

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Pure and F, GeO 2 -doped silica glass cut from fiber preforms prepared by plasma assisted chemical vapor deposition(PCVD) were investigated by ultraviolet absorption spectroscopy. The ultraviolet absorption characteristics of these glasses were also studied after UV laser irradiation and heating treatment. It was found that absorption band near 240 nm assigned to GODC was found both in GeO 2 -doped and F-GeO 2 co-doped silica glass, but absorption intensity of the latter was lower than that of the former. It's because F can react with GODC and GeE′ simultaneously and reduce their concentration. After irradiation, UV absorption change of F-GeO 2 co-doped silica glass was weaker than that of GeO 2 -， doped silica glass it thus can be concluded that introduction of F could depress the UV absorption of GeO 2 -doped silica core effectively.

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“…These problems have been partly overcome by incorporating SiOH groups to enhance the structural relaxation, 118 while the transmittance and radiation toughness at <200 nm have not been satisfactory. 119,120 Studies described in the previous sections indicate that fluorine-doping is a possible way to reduce the color centers and their precursors in the fiber. Optical fibers doped by the SiF group both in the core and clad part were prepared.…”

Section: Photo-structural Change Of the Sioh Groups;mentioning

confidence: 99%

“…Optical fibers doped by the SiF group both in the core and clad part were prepared. 120 The difference of the refractive index was built in by incorporating more SiF groups into the clad part than that in the core part. Although the initial transmittance of a meter long fluorinedoped fiber for the ArF-laser light is as high as $60%, the transmittance decreases rapidly during the ArF-laser irradiation because of the formation of the E 0 centers.…”

Section: Photo-structural Change Of the Sioh Groups;mentioning

confidence: 99%

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

Hosono¹,

Kamiya²,

Hirano³

2006

Bulletin of the Chemical Society of Japan

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This review article describes recent progress in our research on cultivation of functionality in crystalline and amorphous transparent oxides utilizing nanostructures embedded in the material itself. It includes the background of our research and approach. Subjects included are material exploration and device application of transparent oxide semiconductors for transparent electronics, function emergence in nano-porous crystal 12CaO Á 7Al 2 O 3 utilizing active anion species stabilized by sub-nanometer-sized cages, and modified silica glass for vacuum/deep ultraviolet lasers. Our description of each subject include: background and approach, material design concept, fabrication or modification method, properties, and device fabrication. Emphasis is placed on the importance of a variety of built-in nanostructures in transparent oxides for novel function realization and the high potential of transparent oxides as ingredients for an ubiquitous element strategy of material research in this century.

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Optical fiber for deep ultraviolet light

Cited by 33 publications

References 8 publications

Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

UV laser induced transmission change of pure and doped silica glass

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

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