Optical-frequency signal transmission via localized surface plasmons

Fukuhara, Minoru; Aihara, Takuma; Ishii, Yuya; Fukuda, Mitsuo

doi:10.1109/ipcon.2012.6358807

Cited by 1 publication

(3 citation statements)

References 5 publications

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“…Intensity signal transmission has been confirmed on both the continuous-metal and chain-type waveguides (Fukuhara et al, 2012;. The transmission distance for both is limited by Ohmic loss.…”

Section: Signal Transmission Through Surface Plasmonsmentioning

confidence: 80%

“…The chain of disks was designed specifically as a waveguide for localized surface plasmons. Its transmission loss was estimated using the finitedifferent time-domain (FDTD) method; see Figure 6 (Fukuhara et al, 2012). Each disk is gold film with 500-nm in diameter and 100-nm thick; the separation between disks is set at 50 nm.…”

Section: Localized Surface Plasmonsmentioning

confidence: 99%

“…In this paper, surface plasmon devices developed in our group are discussed in regard to integrating with electronic devices on a silicon substrate. The surface plasmon devices in our focus are waveguides, surface plasmon (light) detectors, and the IC of asurface plasmon detector and MOSFET (Fukuda et al, 2007;Fukuda et al, 2008;Fukuda et al, 2010;Aihara et al, 2011;Fukuhara et al, 2012;Aihara et al, 2013;Takeda et al, 2013). The points of discussion are the basic architectures and suitable structures that need to be clarified and proposed for monolithic integration with electronic devices.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Surface Plasmon Devices for Nanoscale Integration with Electronic Device on Silicon - Optical Signal Transmission and Detection through Surface Plasmon on Nanoscale Circuit

Fukuda

Aihara

Fukuhara

et al. 2014

Proceedings of 2nd International Conference on Photonics, Optics and Laser Technology

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This paper discusses the architecture of surface plasmon devices for silicon-based nanoscale-integrated circuits. A suitable structure for surface plasmon devices integrated monolithically with electronic devices is described based on surface plasmon devices fabricated in our group. These devices were fabricated on silicon with conventional CMOS processes. In the devices, light-wave signals are converted into surface plasmon signals with a grating and detected with a Schottky-type diode on a silicon substrate. Both intensity and frequency signals are transmitted along the surface plasmon waveguide in the nanoscale circuit. Such signals were easily amplified with MOSFETs integrated monolithically on the silicon substrate. Here, the wavelength of light used in the circuit is set within the 1550-nm-wavelength band to prevent signals absorption by silicon. This can lead to a simpler structure for waveguides and devices on silicon substrates. These techniques and devices will open a new phase for surface plasmon circuits integrated with electronic devices on silicon substrates.

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Section: Signal Transmission Through Surface Plasmonsmentioning

confidence: 80%

Section: Localized Surface Plasmonsmentioning

confidence: 99%