Optical Gain Tuning in Type-I Al0.45Ga0.55As/GaAs0.84P0.16/Al0.45Ga0.55As Nano-heterostructure

This study of semiconductor laser structure works on reducing the value of the threshold current density to improve the working conditions of the laser device. In this paper shown that the threshold current density and Optical confinement factor Г depends on Barrier width (B), and Number of well (Nw). We found any increase in Barrier width and Number of well is enhanced important parameters of diode laser such as threshold current density and confinement factor that's clearly for (Nw=2, B=40 nm) then (Г=0.175, ), while for (Nw=2, B=60 nm), that give results are (Г=0.195, ). On the other hand, when changing Nw=3, the results become for (B=40 nm and B=60 nm), as follows (Г=0.275, and (Г=0.295, respectively. This investigated contributed to calculating the efficiency and work of the laser device. We found the value of slope efficiency equal (45 %) and the external quantum efficiency ( 50 %).

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Optical Gain Tuning in Type-I Al0.45Ga0.55As/GaAs0.84P0.16/Al0.45Ga0.55As Nano-heterostructure

Cited by 2 publications

References 8 publications

Investigation of high optical gain in type-I AlSb/InGaAsSb/AlSb nano-scale heterostructure for NIR applications

Investigation of high optical gain in type-I AlSb/InGaAsSb/AlSb nano-scale heterostructure for NIR applications

Threshold current density calculation for quantum wire of 〖Hg〗_(0.5) 〖Cd〗_(0.5) Te/〖Hg〗_(0.8) 〖Cd〗_(0.2) Te/CdTe laser

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