Optical modeling of the internal back reflectance of various c-Si dielectric stacks featuring AlO_x, SiN_x, TiO₂ and SiO₂

Abstract

One promising path to a reduced cost of crystalline silicon (c-Si) photovoltaics (PV) is to increase silicon usage efficiency by using thinner wafers. Many challenges arise when transitioning to thin wafer cells, including increased surface recombination at the rear side of the cell, increased wafer bowing, and a reduction in optical absorption due to a decreased optical path length within the silicon. Rear side passivation provides great promise in addressing these challenges. This paper addresses rear side dielectric configurations that can optimize back surface reflectance, in addition to providing excellent surface passivation.

Simulation and application of external quantum efficiency of solar cells based on spectroscopy

“…Therefore, in this study, the absorption coefficient is in-α I  exp(−αx) α k = αλ/π creased while decreasing the thickness of c-Si to ensure the consistence between the calculated absorptance and the actual absorptance of c-Si. Because the of c-Si in the short wavelength region is greater than that in the long wavelength region [32] , combined with the Beer-Lambert's law (I(x) =…”