Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

Montesinos‐Ballester, Miguel; Vakarin, Vladyslav; Ramírez, Joan Manel; Liu, Qiankun; Alonso‐Ramos, Carlos; Roux, Xavier Le; Frigerio, Jacopo; Ballabio, Andrea; Barzaghi, Andrea; Deniel, Lucas; Bouville, David; Vivien, Laurent; Isella, Giovanni; Marris‐Morini, Delphine

doi:10.1038/s43246-019-0003-8

Cited by 30 publications

(19 citation statements)

References 38 publications

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“…A fine tuning of the modulation pattern and frequency allows us to control the time interval between the spikes. Although QCLs are not as prone to all-optical pulses and patterns generation, a challenge that was addressed recently in a low-speed configuration, 75 we propose a method to display microsecond pulses with consistent amplitude. These triggered pulses are of paramount importance for neuromorphic systems.…”

Section: Discussionmentioning

confidence: 99%

Extreme events in quantum cascade lasers

Spitz

Herdt

et al. 2020

Adv. Photon.

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We demonstrate experimentally that mid-infrared quantum cascade lasers (QCLs) operating under external optical feedback exhibit extreme pulses. These events can be triggered by adding small amplitude periodic modulation, with the highest success rate for the case of a pulse-up excitation. These findings broaden the potential applications for QCLs, which have already been proven to be a semiconductor laser of interest for spectroscopic applications and countermeasure systems. The ability to trigger extreme events paves the way for optical neuron-like systems where information propagates as a result of high intensity bursts.

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Section: Discussionmentioning

confidence: 99%

Extreme events in quantum cascade lasers

Spitz

Herdt

et al. 2020

Adv. Photon.

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“…[55] In the past two decades, Ge photodetectors at 1550 nm have been relatively mature, [56] and the development momentum of Ge modulators is also booming. [57][58][59] Unfortunately, the indirect bandgap seriously hinders the application of Ge as light-emitting material, although the indirect valley (L) is only 136 meV lower than direct valley (Γ).…”

Section: Ge-on-si Lasersmentioning

confidence: 99%

Emerging Light‐Emitting Materials for Photonic Integration

Liu

et al. 2020

Advanced Materials

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Nowadays, apart from data communication and telecommunication, photonic integrated systems also show great potential in bio/chemical sensing, medical imaging, and spectroscopy. [5-14] Benefit from mature complementary metal-oxide-semiconductor (CMOS) technology in the past two decades, many high-performance key components in photonic integrated systems have been realized, such as low-loss waveguides, ultrafast modulators, and large bandwidth photodetectors. [15-17] However, the lack of efficient light sources presents a huge roadblock and significantly slows down the progress of photonic integration. In terms of energy efficiency and scalability, on-chip light sources greatly surpass the off-chip light sources. [18] On-chip coupling allows flexible layouts and highdensity integration without introducing extra packaging cost and off-chip coupling losses. An ideal on-chip light source should satisfy the following requirements: emission at communication wavelengths, e.g. 850, 1310, or 1550 nm; continuous wave (CW) operation via electrical pumping at room temperature; high output power with low energy consumption, i.e., high efficiency and low threshold; CMOS-compatible fabrication techniques. Because of the poor radiative recombination efficiency of silicon, researchers have turned their attention to germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers, which have been summarized in the literature. [19-21] Although the above-mentioned requirements may be relaxed to some extent according to different application scenarios, these new light sources have also encountered various difficulties and challenges on the way to practical applications (see Section 2). Therefore, it is still necessary and urgent to identify alternatives for the photonic integrated system. In the past 10 years, 2D materials and metal halide perovskites are undoubtedly two rising stars in the semiconductor field. These emerging materials with unique properties are widely used in optoelectronic devices, such as solar cells, photodetectors, light-emitting diodes (LEDs), and lasers. [22,34] Especially in the application of on-chip light sources, these materials show some advantages over Ge and III-V semiconductors. Both 2D materials and metal-halide perovskites have a variety of low-cost preparation methods. Both of them can be easily integrated on foreign substrates. More importantly, 2D materials and metal-halide perovskites own novel and charming luminescence properties. These materials with diverse energy bandgaps cover a broad spectral range, [22,35-37] which implies that the emission wavelength can be selected to accommodate different applications. Great advances of 2D material and The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-...

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“…In this context, all-optical modulation methods have been proposed and studied, which avoid the electrical circuitry bottlenecks, providing an interesting alternative for the high-speed modulation of QCLs. [41][42][43][44]…”

Section: Summary Of Reported Qcl-based Fsoc Experimentsmentioning

confidence: 99%

Free‐Space Communications Enabled by Quantum Cascade Lasers

Pang

Ozoliņš

Westergren

et al. 2020

Physica Status Solidi (a)

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Future generations of wireless communication systems are expected to support orders of magnitude faster data transfer with much lower latency than the currently deployed solutions. Development of wireless transceivers of higher bandwidth, low energy consumption, and small footprint becomes challenging with radio frequency (RF) electronic technologies. Photonics-assisted technologies show many advantages in generating signals of ultrabroad bandwidth at high carrier frequencies in the millimeter-wave, terahertz, and IR bands. Among these frequency options, the mid-IR band has recently attracted great interest for future wireless communication due to its intrinsic merits of low propagation loss and high tolerance of atmospheric perturbations. A promising source for mid-IR freespace communications is the semiconductor quantum cascade laser (QCL), which can be directly modulated at a high speed and facilitates monolithic integration for compact transceivers. Herein, the research and development of QCL-based freespace communications are reviewed and a recent experimental study of multigigabit transmission with a directly modulated mid-IR QCL and a commercial off-the-shelf IR photodetector is reported on. Up to 4 Gb s À1 transmission of two advanced modulation formats, namely, four-level pulse amplitude modulation (PAM-4) and discrete multitone (DMT) modulation, is demonstrated.

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Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

Cited by 30 publications

References 38 publications

Extreme events in quantum cascade lasers

Extreme events in quantum cascade lasers

Emerging Light‐Emitting Materials for Photonic Integration

Free‐Space Communications Enabled by Quantum Cascade Lasers

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